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Soft errors handling in EEPROM devices

  • US 7,437,631 B2
  • Filed: 08/13/2004
  • Issued: 10/14/2008
  • Est. Priority Date: 05/20/1992
  • Status: Expired due to Fees
First Claim
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1. A method of improving data retention in a nonvolatile writable memory having a first reference level and a second reference level, the nonvolatile writable memory having a plurality of memory cells, each of the memory cells being in an first state when storing a charge below the first reference level, and each of the memory cells being in a second state when storing a charge above the second reference level, the method comprising:

  • writing into each of a set of the plurality of memory cells a respective data value, wherein the respective data values are one of the first and second states;

    identifying a memory cell of the set having a charge above the first reference level and below the second reference level; and

    rewriting the respective data value into the memory cell.

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