LED module

• US 7,439,549 B2
• Filed: 04/16/2003
• Issued: 10/21/2008
• Est. Priority Date: 10/16/2000
• Status: Expired due to Term

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Späth, Werner, Marchl, Werner, Waitl, Günter
• Primary Examiner(s): Weiss; Howard
• Assistant Examiner(s): Trinh; Hoa B
• Application Number:
  US10/414,739
• Publication Number:
  US 20030178627A1
• Time in Patent Office: 2,015 Days
• Field of Search: 257/88, 257/72, 257/98, 257/96, 257/93, 257/103, 257/99, 257/782, 257/675, 257/95, 257/100, 257/79, 257/89, 257/E33.068, 257/E51.018, 257/E33.001, 257/701, 257/706, 438/22, 438/46
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: Y10S 362/80 Light emitting diode

Abstract

An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which emit light of differing central wavelengths during operation, so that the LED module is suitable for generating mixed-color light, and in particular for generating white light.

Claims

1. An LED module, comprising:

a carrier having a first main area, a second main area, at least one semiconductor layer and a two-layer isolation layer, said first main area having a planar configuration; and

a plurality of separately prefabricated unhoused LED semiconductor bodies mounted in common on said first main area of said carrier, said second main area disposed opposite said first main area remote from said LED semiconductor bodies;

wherein said two-layer isolation layer comprises a layer consisting of silicon oxide and a layer consisting of silicon nitride.

2. The LED module according to claim 1, wherein said semiconductor layer contains a material selected from the group consisting of silicon and gallium arsenide.

3. The LED module according to claim 1, wherein said carrier is formed in a multilayered fashion.

4. The LED module according to claim 1, further comprising conductive regions on which said LED semiconductor bodies are applied, are formed on said first main area of said carrier.

5. The LED module according to claim 4, wherein said conductive regions have a high reflectivity in a spectral region of radiation emitted by said LED semiconductor bodies.

6. The LED module according to claim 4, wherein said conductive regions are formed from aluminum.

7. The LED module according to claim 1, further comprising chip connection regions formed on said electrical insulating layer and said LED semiconductor bodies are disposed on said chip connection regions.

8. The LED module according to claim 4, further comprising chip connection regions formed on said conductive regions and said LED semiconductor bodies are disposed on said chip connection regions.

9. The LED module according to claim 7, wherein each of said chip connection regions are formed as a stack of thin metal layers.

10. The LED module according to claim 9, wherein said thin metal layers contain materials selected from the group consisting of titanium, copper, gold, platinum and other noble metals.

11. The LED module according to claim 1, further comprising a heat sink connected to said carrier on a said second main area.

12. The LED module according to claim 11, wherein said heat sink is formed of a material selected from the group consisting of copper and aluminum.

13. The LED module according to claim 11, wherein said heat sink adjoins said semiconductor layer.

14. The LED module according to claim 13, further comprising a soldering compound connecting said heat sink to said semiconductor layer.

15. The LED module according to claim 1, wherein said LED semiconductor bodies are disposed on said carrier in a matrix form.

16. The LED module according to claim 1, wherein said LED semiconductor bodies emit light of differing central wavelengths during operation.

17. The LED module according to claim 16, wherein the light emitted by individual ones of said LED semiconductor bodies during operation has central wavelengths in the red, green or blue spectral region.

18. The LED module according to claim 16, wherein said LED semiconductor bodies with a same central wavelength in each case are disposed regularly on said carrier.

19. The LED module according to claim 1, wherein said LED semiconductor bodies are one of soldered on and adhesively bonded on using an adhesion agent.

20. The LED module according to claim 19, wherein said adhesion agent is electrically conductive.

21. The LED module according to claim 19, wherein said adhesion agent is selected from the group consisting of solder, an adhesive, and a silver conductive adhesive.

22. The LED module according to claim 19, further comprising a reservoir formed at least partially around said LED semiconductor bodies for said adhesion agent.

23. The LED module according to claim 8, wherein each of said chip connection regions is formed as a stack of thin metal layers.

24. The LED module according to claim 23, wherein said thin metal layers contain materials selected from the group consisting of titanium, copper, gold, platinum and other noble metals.

25. The LED module according to claim 13, further comprising a thermally conductive adhesive connecting said heat sink to said semiconductor layer.

26. The LED module according to claim 1, further comprising conduction structures formed on said carrier for providing electrical supply for said LED semiconductor bodies.

27. The LED module according to claim 1, wherein the module comprises a lighting device.

28. The LED module according to claim 18, wherein said LED semiconductor bodies are disposed in a periodically recurring sequence with regard to the central wavelengths in matrix rows.

29. The LED module according to claim 28, wherein a configuration of said LED semiconductor bodies in said matrix rows have a same periodically recurring sequence with regard to the central wavelengths.

30. The LED module according to claim 29, wherein said LED semiconductor bodies with a same central wavelength are in each case disposed in matrix columns.

31. The LED module according to claim 29, wherein a configuration of said LED semiconductor bodies in said matrix rows with an odd row number is identical and said configuration in said matrix rows with an even row number emerges from an overlying matrix row by displacement by one column width toward the left or toward the right.