Nitride-based compound semiconductor light emitting device

• US 7,439,551 B2
• Filed: 07/08/2005
• Issued: 10/21/2008
• Est. Priority Date: 07/08/2004
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hata, Toshio
• Primary Examiner(s): WILSON, ALLAN R
• Application Number:
  US11/178,201
• Publication Number:
  US 20060006398A1
• Time in Patent Office: 1,201 Days
• Field of Search: 257/79, 257/94, 257/99, 257/E33.075, 257/E33.068, 257/E33.064, 257/98, 438/46, 438/47
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

The nitride-based compound semiconductor light emitting device includes a first ohmic electrode, a bonding metal layer, a second ohmic electrode, a nitride-based compound semiconductor layer, and a transparent electrode stacked in this order on a support substrate, and further includes an ohmic electrode formed on a back side of the support substrate.

Claims

1. A nitride-based compound semiconductor light emitting device, comprising:

a support substrate;

a first ohmic electrode formed on the support substrate;

a bonding metal layer formed on the first ohmic electrode;

a reflecting layer formed on the bonding metal layer;

a second ohmic electrode formed on the reflecting layer;

a nitride-based compound semiconductor layer formed directly on an upper surface of the second ohmic electrode,

wherein the upper surface of the second ohmic electrode is exposed adjacent to opposing sides of the nitride-based compound semiconductor layer;

a transparent electrode formed on an approximately entire upper surface of the semiconductor layer; and

an ohmic electrode formed on a back side of said support substrate,

wherein the reflecting layer comprises a rare earth metal blended with Ag.

2. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said nitride-based compound semiconductor layer has at least a P-type layer, a light emitting layer and an N-type layer stacked in this order from a side facing the support substrate.

3. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said support substrate is conductive and formed of at least one of Si, GaAs and GaP, and has resistivity in a range from 10⁻

4 Ω

cm to 10 Ω

cm.

4. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said support substrate is conductive and formed of at least one of CuW, CuAg and CuMo, and has thermal conductivity in a range from 1.5 W/cm·

k to 2.5 W/cm·

k.

5. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said bonding metal layer consists of at least two layers formed of same or different materials with respect to each other.

6. The nitride-based compound semiconductor light emitting device according to claim 5, wherein the at least two layers of said bonding metal layer are formed of at least two different metals selected from Au, Sn, AuSn and Au—

Ge.

7. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said bonding metal layer is formed of a metal selected from Au, Sn, AuSn and Au—

Ge.

8. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said second ohmic electrode has a thickness in a range from 1 nm to 15 nm.