Semiconductor device having a lateral channel and contacts on opposing surfaces thereof
First Claim
1. A semiconductor device, comprising:
- a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof;
an isolation layer oppositely doped from and above said conductive substrate;
a lateral channel above said isolation layer;
a second contact above said lateral channel; and
an interconnect formed through said lateral channel to, without penetrating through, said conductive substrate operable to provide a low resistance coupling between said first contact and said lateral channel.
5 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device having a lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel.
106 Citations
44 Claims
-
1. A semiconductor device, comprising:
-
a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof; an isolation layer oppositely doped from and above said conductive substrate; a lateral channel above said isolation layer; a second contact above said lateral channel; and an interconnect formed through said lateral channel to, without penetrating through, said conductive substrate operable to provide a low resistance coupling between said first contact and said lateral channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
-
25. A semiconductor device, comprising:
-
a substrate having a source contact covering a substantial portion of a bottom surface thereof; a first buffer layer formed over said substrate; an isolation layer oppositely doped from and formed over said first buffer layer; a first spacer layer formed over said isolation layer; a second buffer layer formed over said first spacer layer; a first barrier layer formed over said second buffer layer; a second spacer layer formed over said first barrier layer; a lateral channel formed over said second spacer layer; a third spacer layer formed over said lateral channel; a second barrier layer formed over said third spacer layer; a recess layer formed over said second barrier layer; an etch-stop layer formed over said recess layer; first and second source/drain contact layers formed over said etch-stop layer; a source interconnect formed through said lateral channel to, without penetrating through, said substrate operable to provide a low resistance coupling between said source contact and said lateral channel; a gate located in a gate recess formed though said first and second source/drain contact layers, said etch-stop and said recess layer; a dielectric layer formed over said gate, and said first and second source/drain contact layers; a drain post located in a drain via formed through said dielectric layer and over said first and second source/drain contact layers; and a drain contact coupled to said drain post. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
-
Specification