Semiconductor device having silicide formed with blocking insulation layer
First Claim
1. A semiconductor device comprising:
- an isolation layer disposed in a semiconductor substrate, the isolation layer defining an active region;
a gate pattern disposed on the active region;
source/drain regions disposed in the active region at both sides of the gate pattern;
sidewall spacers disposed on sidewalls of the gate pattern, the sidewall spacers comprising an inner spacer having an L-shaped cross-section that is formed on a sidewall of the gate pattern and neighboring the gate pattern, and an outer spacer having a curved sidewall that is formed on the inner spacer and covering entire sidewalls of the gate pattern;
a blocking insulation layer disposed on the isolation layer and on a portion of the active region neighboring the isolation layer, the blocking insulation layer spaced apart from the sidewall spacers; and
a first silicide layer disposed on the source/drain regions between the blocking insulation layer and the sidewall spacers and having a boundary aligned to edges of the blocking insulation layer and the sidewall spacer.
1 Assignment
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Accused Products
Abstract
Some embodiments include an isolation layer defining an active region of a substrate, a gate pattern formed on the active region, and source/drain regions formed in the active region. Sidewall spacers are formed on sidewalls of the gate pattern, and a blocking insulation layer is formed on the isolation layer and on a portion of the active region neighboring the isolation layer. A silicide layer is formed on source/drain regions between the blocking insulation layer and the sidewall spacers. Some embodiments include defining an active region of a substrate using an isolation layer, forming a gate pattern on the active region, implanting impurities into the active region, and forming a spacer insulation layer on a surface of the substrate with the gate pattern. A region of the spacer insulation layer becomes thinner the closer it is to the gate pattern. Other embodiments are described in the claims.
9 Citations
13 Claims
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1. A semiconductor device comprising:
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an isolation layer disposed in a semiconductor substrate, the isolation layer defining an active region; a gate pattern disposed on the active region; source/drain regions disposed in the active region at both sides of the gate pattern; sidewall spacers disposed on sidewalls of the gate pattern, the sidewall spacers comprising an inner spacer having an L-shaped cross-section that is formed on a sidewall of the gate pattern and neighboring the gate pattern, and an outer spacer having a curved sidewall that is formed on the inner spacer and covering entire sidewalls of the gate pattern; a blocking insulation layer disposed on the isolation layer and on a portion of the active region neighboring the isolation layer, the blocking insulation layer spaced apart from the sidewall spacers; and a first silicide layer disposed on the source/drain regions between the blocking insulation layer and the sidewall spacers and having a boundary aligned to edges of the blocking insulation layer and the sidewall spacer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an isolation layer disposed in a semiconductor substrate, the isolation layer defining an active region, the isolation layer including an indentation in a region neighboring the active region; a gate pattern disposed on the active region; source/drain regions disposed in the active region at both sides of the gate pattern; sidewall spacers disposed on sidewalls of the gate pattern; a blocking insulation layer disposed on the isolation layer, the indentation, and on a portion of the active region neighboring the indentation; and a first silicide layer disposed on one of the source/drain regions between the blocking insulation layer and one of the sidewall spacers and having a boundary aligned to an edge of the blocking insulation layer and an edge of one of the sidewall spacers. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification