Lithographic apparatus and device manufacturing method using interferometric and maskless exposure units

• US 7,440,078 B2
• Filed: 12/20/2005
• Issued: 10/21/2008
• Est. Priority Date: 12/20/2005
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Troost, Kars Zeger, Bleeker, Arno Jan
• Primary Examiner(s): Rutledge; Della J.
• Application Number:
  US11/311,640
• Publication Number:
  US 20070139633A1
• Time in Patent Office: 1,036 Days
• Field of Search: 355/53, 355/67, 355/71
• US Class Current: 355/53
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/70408 Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
• CPC Class Codes: G03F 7/7045 Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

A lithographic system combining an interference exposure unit and a lithography unit. The lithography unit can comprise an array of individually controllable elements. The lithography system can be arranged such that a pitch of the lines exposed by the interference exposure unit is an integer multiple of a size of an exposure area of the lithography unit corresponding to a single individually controllable element.

Claims

1. A lithographic system for exposing a pattern on a substrate, comprising:

an interference exposure unit that projects two beams of radiation onto at least a portion of the substrate, such that the two beams of radiation interfere to expose a plurality of lines; and

a lithography unit that modulates a beam of radiation using an array of individually controllable elements and projects the modulated beam onto at least a portion of the substrate;

wherein the interference exposure unit and the lithography unit are configured such that a pitch of the lines exposed by the interference exposure unit, in a direction perpendicular to a length of the lines, is an integer multiple of a width, in a direction of the exposure on the substrate by the lithography unit, corresponding to a single individually controllable element.

2. The lithographic system of claim 1, wherein the pitch of the lines exposed by the interference exposure unit is one, two or four times the width of the exposure corresponding to a single individually controllable element of the lithography unit.

3. The lithographic system of claim 1, further comprising:

an exposure size controller that is constructed to control at least one of the pitch of the lines exposed by the interference exposure unit and the size of the exposure corresponding to a single individually controllable element of the lithography unit.

4. The lithographic system of claim 1, wherein the lithography unit comprises:

a projection system that projects the modulated beam of radiation onto the substrate,

wherein the projection system has variable magnification, such that the size of the exposure on the substrate corresponding to one of the individually controllable elements is adjustable.

5. The lithographic system of claim 4, further comprising:

a magnification controller that controls magnification of the projection system in order to maintain a given relationship between the pitch of the lines and the width of the exposure corresponding to one of the individually controllable elements.

6. The lithographic system of claim 4, wherein the magnification of the projection system is adjustable so as to switch the lithographic system between operation in which the integer multiple relating the pitch of the lines to the width of the exposure corresponding to one individually controllable element has a first value and operation in which the integer multiple has a second value.

7. The lithographic system of claim 1, wherein:

the interference exposure unit is configured such that the two beams of radiation are each projected onto the substrate at respective oblique angles; and

the interference exposure unit comprises a beam angle controller that adjusts the angles at which the two beams are projected onto the substrate.

8. The lithographic system of claim 1, wherein:

the interference exposure unit is configured such that the two beams of radiation are each projected onto the substrate through a liquid that is adjacent the substrate; and

the interference exposure unit comprises a liquid composition controller constructed to control the refractive index of the liquid by controlling its composition.

9. The lithographic system of claim 1, wherein the interference exposure unit comprises a radiation intensity controller that controls the intensity of the two beams of radiation.

10. The lithographic system of claim 1, wherein the array of individually controllable elements is constructed such that each individually controllable element controls a phase of the radiation in the corresponding portion of the modulated beam of radiation projected onto the substrate by the lithography unit relative to adjacent portions of the modulated beam of radiation.

11. The lithographic system of claim 1, wherein the array of individually controllable elements is constructed such that each individually controllable element is set to one of two possible states in which relatively more and relatively less radiation, respectively, is projected onto the substrate in the corresponding portion of the modulated beam of radiation.

12. The lithographic system of claim 1, wherein the array of individually controllable elements is constructed such that each individually controllable element is set to one of three or more possible states, each associated with a different intensity of radiation being projected onto the substrate in the corresponding portion of the modulated beam of radiation.

13. The lithographic system of claim 1, further comprising:

a radiation sensitive layer processing unit that processes a substrate,

wherein the interference exposure unit is arranged such that the substrate is transferred from the radiation sensitive layer processing unit to the lithography unit through the interference exposure unit.

14. The lithographic system of claim 13, wherein at least one of the radiation sensitive layer processing unit, the lithography unit, and the interference exposure unit comprises:

a substrate rotator that is constructed to rotate the substrate about an axis perpendicular to the planar surface of the substrate.

15. The lithographic system of claim 13, wherein the interference exposure unit comprises:

a substrate handler that at least one of receives the substrate from or transfers the substrate to at least one of the radiation sensitive layer processing unit and the lithography unit.

16. The lithographic system of claim 13, wherein the lithography unit comprises:

an array of individually controllable elements that is configured to perform the modulation of the beam of radiation.

17. The lithographic system of claim 13, wherein the a radiation sensitive layer processing unit performs at least one of:

(a) heating the unexposed substrate, (b) applying an anti-reflective coating to the substrate, (c) applying a water impermeable coating to the substrate, (d) applying a coating to the substrate to make the surface hydrophobic or hydrophilic, or (e) removing one or more of an anti-reflective coating, a water impermeable coating, and a hydrophobic or hydrophilic coating.

18. A device manufacturing method, comprising:

projecting two beams of radiation onto at least a portion of a substrate, such that the two beams of radiation interfere to expose a plurality of lines; and

modulating a beam of radiation using an array of individually controllable elements; and

projecting the modulated beam of radiation onto at least the portion of the substrate,

wherein a pitch of the exposed plurality of lines, in a direction perpendicular to a length of the lines, is an integer multiple of a width, in the direction of an exposure on the substrate by the modulated beam, corresponding to a single individually controllable element.

19. The device manufacturing method of claim 18, comprising:

processing a substrate in a radiation sensitive layer processing unit;

projecting two beams of radiation onto at least a portion of the processed substrate, such that the two beams of radiation interfere to expose a plurality of lines; and

projecting a modulated beam of radiation onto at least the portion of the exposed substrate.

20. The device manufacturing method of claim 19, wherein the processing step comprises at least one of:

(a) heating the unexposed substrate, (b) applying an anti-reflective coating to the substrate, (c) applying a water impermeable coating to the substrate, (d) applying a coating to the substrate to make the surface hydrophobic or hydrophilic, or (e) removing one or more of an anti-reflective coating, a water impermeable coating, and a hydrophobic or hydrophilic coating.