Programming non-volatile memory with improved boosting
First Claim
1. A method for programming a set of non-volatile storage elements, comprising:
- isolating at least three channel regions associated with the non-volatile storage elements, wherein a first channel region and a second channel region are proximate to a selected storage element, and a third channel region is remote from the selected storage element;
boosting a potential of each channel region, wherein the potential of the third channel region is boosted with a lower boosting voltage than the potentials of the first and second channel regions.
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Abstract
Non-volatile storage elements are programmed in a manner that reduces program disturb, particularly at the edges storage elements strings, by using modified pass voltages. In particular, during the programming of a selected storage element, an isolation voltage is applied to a storage element proximate to the selected storage element thereby electrically dividing the channel associated with the storage elements into two isolated areas. Additional isolated areas are formed remotely from the selected storage element by applying the isolation voltage to other remote storage elements. The isolated channel regions associated with the storage elements are then boosted with different pass voltages in order to alleviate the effects of program disturb. Thus, a standard pass voltage is applied to storage elements immediately adjacent to the selected storage element, and a lower pass voltage is applied to storage elements remote from the selected storage element. In one preferred embodiment, a higher pass voltage is applied to storage elements immediately adjacent the selected storage element on the side having previously programmed storage elements. These techniques reduce the leakage of charge from adjacent boosted channel regions caused by gate induced drain leakage at the source select line and the drain select line, as well as from isolation word lines, thereby reducing program disturb effects.
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Citations
47 Claims
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1. A method for programming a set of non-volatile storage elements, comprising:
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isolating at least three channel regions associated with the non-volatile storage elements, wherein a first channel region and a second channel region are proximate to a selected storage element, and a third channel region is remote from the selected storage element; boosting a potential of each channel region, wherein the potential of the third channel region is boosted with a lower boosting voltage than the potentials of the first and second channel regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for programming a set of non-volatile storage elements, comprising:
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selecting a storage element for programming; applying an isolation voltage to at least two storage elements located apart from each other thereby electrically dividing the set of storage elements into at least a first, a second, and a third subset of storage elements, wherein the first and second subsets are located proximate to the selected storage element and the third subset is located remote from the selected storage element; and applying a distinct boosting voltage to each subset of the storage elements;
wherein the boosting voltage applied to the third subset of storage elements is lower than the boosting voltages applied to the first and second subsets of storage elements. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for programming a set of non-volatile storage elements, comprising:
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applying a programming voltage to a selected storage element; electrically dividing a channel associated with the set of storage elements into at least three channel regions, wherein a first and second of the channel regions are proximate to the selected storage element and a third channel region is remote from the selected storage element; and boosting a potential of each channel region, wherein the potential of the third channel region is boosted with a lower boosting voltage than the potentials of the first and second channel regions. - View Dependent Claims (16)
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17. A method for programming a set of non-volatile storage elements arranged between a first select gate and a second select gate, comprising:
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applying a programming voltage to a selected storage element; applying an isolation voltage to at least two storage elements, a first of the storage elements located proximate to the selected storage element and a second of the storage elements located remote from the selected storage element, thereby electrically dividing a channel associated with the storage elements into at least three channel regions, wherein a first and second channel region are proximate to the selected storage element and a third channel region is remote from the selected storage element; and applying a distinct boosting voltage to each of the storage elements, wherein a lower boosting voltage is applied to storage elements located in correspondence with the third channel region than is applied to storage elements located in correspondence with the first and second channel regions. - View Dependent Claims (18, 19, 20, 21)
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22. A method for programming a set of non-volatile storage elements that are arranged between a first select gate and a second select gate, comprising:
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selecting a storage element for programming; electrically dividing a channel associated with the set of storage elements into at least thee channel regions, a first channel region being located proximate to the selected storage element on a side nearer the first select gate, a second channel region being located proximate to the selected storage element on a side nearer the second select gate, and a third channel region being located remote from the selected storage element; boosting a channel voltage of the first and second channel regions with a first boost voltage; and boosting a channel voltage of the third channel region with a second boost voltage; wherein the first boosting voltage is greater than the second boosting voltage. - View Dependent Claims (23)
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24. A system for programming a set of non-volatile storage elements, comprising:
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a plurality of non-volatile storage elements; a managing circuit in communication with the storage elements, wherein the managing circuit isolates at least thee channel regions associated with the non-volatile storage elements, wherein a first channel region and a second channel region are proximate to a selected storage element, and a third channel region is remote from the selected storage element, and boosts a potential of each channel region, wherein the potential of the third channel region is boosted with a lower boosting voltage than the potentials of the first and second channel regions. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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32. A system for programming a set of non-volatile storage elements, comprising:
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a plurality of non-volatile storage elements; a managing circuit in communication with the storage elements, wherein the managing circuit selects a storage element for programming, applies an isolation voltage to at least two storage elements located apart from each other thereby electrically dividing the set of storage elements into at least a first, a second, and a third subset of storage elements, wherein the first and second subsets are located proximate to the selected storage element and the third subset is located remote from the selected storage element, and applies a distinct boosting voltage to each subset of the storage elements, wherein the boosting voltage applied to the third subset of storage elements is lower that the boosting voltages applied to the first and second subsets of storage elements. - View Dependent Claims (33, 34, 35, 36, 37, 38)
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39. A system for programming a set of non-volatile storage elements, comprising:
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a plurality of non-volatile storage elements; a managing circuit in communication with the storage elements, wherein the managing circuit applies a programming voltage to a selected storage element, electrically divides a channel associated with the set of storage elements into at least three channel regions, wherein a first and second of the channel regions are proximate to the selected storage element and a third channel region is remote from the selected storage element, boosts a potential of the first and second channel regions using a first boosting voltage, boosts a potential of each channel region, wherein the potential of the third channel regions is boosted with a lower boosting voltage than the potentials of the first and second channel regions. - View Dependent Claims (40)
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41. A system for programming a set of non-volatile storage elements arranged between a first select gate and a second select gate, comprising:
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a plurality of non-volatile storage elements; a managing circuit in communication with the storage elements, wherein the managing circuit applies a programming voltage to a selected storage element, applies an isolation voltage to at least two storage elements, a first of the storage elements located proximate to the selected storage element and a second of the storage elements located remote from the selected storage element, thereby electrically dividing a channel associated with the storage elements into at least three channel regions, wherein a first and second channel region are proximate to the selected storage element and a third channel region is remote from the selected storage element, applies a distinct boosting voltage to each of the storage elements, wherein a lower boosting boltage is applied to storage elements located in correspondence with the third channel region than is applied to storage elements located in correspondence with the first and second channel regions. - View Dependent Claims (42, 43, 44, 45)
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46. A system for programming a set of non-volatile storage elements that are arranged between a first select gate and a second select gate, comprising:
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a plurality of non-volatile storage elements; a managing circuit in communication with the storage elements, wherein the managing circuit selects a storage element for programming, electrically divides a channel associated with the set of storage elements into at least three channel regions, a first channel region being located proximate to the selected storage element on a side nearer the first select gate, a second channel region being located proximate to the selected storage element on a side nearer the second select gate, and a third channel region being located remote from the selected storage element, boosts a channel voltage of the first and second channel regions with a first boost voltage, boosts a channel voltage of the third channel region with a second boost voltage, wherein the first boosting voltage is greater than the second boosting voltage. - View Dependent Claims (47)
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Specification