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Programming non-volatile memory with improved boosting

  • US 7,440,326 B2
  • Filed: 09/06/2006
  • Issued: 10/21/2008
  • Est. Priority Date: 09/06/2006
  • Status: Active Grant
First Claim
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1. A method for programming a set of non-volatile storage elements, comprising:

  • isolating at least three channel regions associated with the non-volatile storage elements, wherein a first channel region and a second channel region are proximate to a selected storage element, and a third channel region is remote from the selected storage element;

    boosting a potential of each channel region, wherein the potential of the third channel region is boosted with a lower boosting voltage than the potentials of the first and second channel regions.

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