×

Method of determining voltage compensation for flash memory devices

  • US 7,440,333 B2
  • Filed: 01/27/2006
  • Issued: 10/21/2008
  • Est. Priority Date: 06/03/2004
  • Status: Active Grant
First Claim
Patent Images

1. A method of programming a memory cell comprising:

  • establishing a plurality of groups of memory cells associated with a memory cell array, wherein each group has a predetermined set of program voltages associated therewith, wherein at least two groups in the memory cell array have a different predetermined set of program voltages;

    identifying the group of the plurality of groups of memory cells that the memory cell is a member of;

    obtaining the predetermined set of program voltages associated with the identified group, wherein the predetermined set of program voltages include nominal and adjustment values, and wherein the adjustment values include a gate voltage adjustment value; and

    programming the memory cell with the obtained program voltages.

View all claims
  • 9 Assignments
Timeline View
Assignment View
    ×
    ×