Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
First Claim
1. A nitride semiconductor device comprising:
- a nitride semiconductor substrate having a first surface and second surface;
a nitride semiconductor structure having an indium-containing active layer, the nitride semiconductor structure having been grown on the first surface of the nitride semiconductor substrate, andan n-side electrode formed on the second surface of the nitride semiconductor substrate, and,wherein the nitride semiconductor structure is at least partially formed in a ridge at its top surface, andwherein the side surfaces of the nitride semiconductor structure is formed on or parallel to an M plane of the nitride semiconductor substrate, andwherein the number of crystal defects in the nitride semiconductor substrate is less than 1×
108/cm2.
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Abstract
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
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Citations
18 Claims
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1. A nitride semiconductor device comprising:
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a nitride semiconductor substrate having a first surface and second surface; a nitride semiconductor structure having an indium-containing active layer, the nitride semiconductor structure having been grown on the first surface of the nitride semiconductor substrate, and an n-side electrode formed on the second surface of the nitride semiconductor substrate, and, wherein the nitride semiconductor structure is at least partially formed in a ridge at its top surface, and wherein the side surfaces of the nitride semiconductor structure is formed on or parallel to an M plane of the nitride semiconductor substrate, and wherein the number of crystal defects in the nitride semiconductor substrate is less than 1×
108/cm2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A nitride semiconductor comprising:
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a nitride semiconductor substrate having a first surface and second surface; a nitride semiconductor structure having an indium-containing active layer, the nitride semiconductor structure having been grown on the first surface of the nitride semiconductor substrate; an n-side electrode formed on the second surface of the nitride semiconductor substrate; and a buffer layer in contact with the nitride semiconductor substrate, the buffer layer being a distorted superlattice structure formed by alternately stacking first and second nitride semiconductor layers having different compositions, wherein the nitride semiconductor structure is at least partially formed in a ridge at its top surface, and wherein the side surfaces of the nitride semiconductor structure is formed on or parallel to an M plane of the nitride semiconductor substrate. - View Dependent Claims (14, 15)
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16. A nitride semiconductor device comprising:
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a nitride semiconductor substrate having a first surface and second surface; a nitride semiconductor structure having an indium-containing active layer, the nitride semiconductor structure having been grown on the first surface of the nitride semiconductor substrate; and an n-side electrode formed on the second surface of the nitride semiconductor substrate, wherein the nitride semiconductor structure is at least partially formed in a ridge at its top surface, wherein the side surfaces of the nitride semiconductor structure is formed on or parallel to an M plane of the nitride semiconductor substrate, and wherein the nitride semiconductor substrate is doped with an n-type impurity such that the n-type impurity concentration has a gradient, wherein the gradient from said first surface to said second surface is from lesser concentration to greater concentration. - View Dependent Claims (17, 18)
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Specification