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Anneal of ruthenium seed layer to improve copper plating

  • US 7,442,267 B1
  • Filed: 11/29/2004
  • Issued: 10/28/2008
  • Est. Priority Date: 11/29/2004
  • Status: Expired due to Fees
First Claim
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1. A method of treating a ruthenium-containing thin film during integrated circuit fabrication, comprising processes of:

  • providing a ruthenium-containing thin film located on a substrate, said ruthenium-containing thin film having a thickness in a range of about from 1 nm to 20 nm; and

    annealing said ruthenium-containing thin film in an oxygen-free environment under oxide-reducing conditions to form a substantially oxide-free annealed ruthenium-containing thin film.

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