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Nanostructured materials and photovoltaic devices including nanostructured materials

  • US 7,442,320 B2
  • Filed: 06/16/2005
  • Issued: 10/28/2008
  • Est. Priority Date: 06/18/2004
  • Status: Active Grant
First Claim
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1. A nanostructured material, comprising:

  • (a) a first nano-network formed from a plurality of Si quantum dots that are at least one of fused and interconnected; and

    (b) a second nano-network coupled to said first nano-network and formed from a plurality of Ge quantum dots that are at least one of fused and interconnected,said plurality of Si quantum dots having a first peak size that is from about 1 nm to about 20 nm, said plurality of Ge quantum dots having a second peak size that is greater than said first peak size to define a staggered band offset between said first nano-network and said second nano-network,said nanostructured material being configured to absorb light to produce a first type of charge carrier and a second type of charge carrier, said first type of charge carrier separating into said first nano-network in accordance with said staggered band offset and being-transported in said first nano-network, said second type of charge carrier separating into said second nano-network in accordance with said staggered band offset and being transported in said second nano-network, said nanostructured material having an absorption coefficient that is at least 103 cm

    1
    within a range of wavelengths from about 400 nm to about 700 nm.

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