Manufacturing a semiconductor device
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
0 Assignments
0 Petitions
Accused Products
Abstract
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
62 Citations
26 Claims
-
1. A method of manufacturing a semiconductor device, comprising:
-
forming on an insulating surface a first semiconductor film having an amorphous structure; providing the first semiconductor film with a material comprising a metal element; heating the first semiconductor film to crystallize the first semiconductor film after providing said material; irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere; removing an oxide from the crystallized first semiconductor film after the irradiation of the laser; forming a barrier layer on the crystallized first semiconductor film; forming a second semiconductor film on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (2, 3, 4)
-
-
5. A method of manufacturing a semiconductor device, comprising:
-
forming on an insulating surface a first semiconductor film having an amorphous structure; providing the first semiconductor film with a material comprising a metal element; heating the first semiconductor film to crystallize the first semiconductor film after providing said material; irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere; forming a barrier layer on the crystallized first semiconductor film; forming a second semiconductor film containing a noble gas element on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (6, 7, 8, 9)
-
-
10. A method of manufacturing a semiconductor device, comprising:
-
forming on an insulating surface a first semiconductor film having an amorphous structure; providing the first semiconductor film with a material comprising a metal element; heating the first semiconductor film to crystallize the first semiconductor film after providing said material; irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere; forming a barrier layer on the crystallized first semiconductor film; forming a second semiconductor film containing argon at a concentration of 1×
1018/cm3 to 1×
1022/cm3 on the barrier layer;removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (11, 12, 13)
-
-
14. A method of manufacturing a semiconductor device, comprising:
-
forming on an insulating surface a first semiconductor film having an amorphous structure; providing the first semiconductor film with a material comprising a metal element; heating the first semiconductor film to crystallize the first semiconductor film after providing said material; irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere; removing an oxide from the crystallized first semiconductor film after the irradiation of the laser; forming a barrier layer on the crystallized first semiconductor film; forming a second semiconductor film on the barrier layer without exposing the barrier layer to the air; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (15, 16, 17)
-
-
18. A method of manufacturing a semiconductor device, comprising:
-
forming on an insulating surface a first semiconductor film having an amorphous structure; providing the first semiconductor film with a material comprising a metal element; heating the first semiconductor film to crystallize the first semiconductor film after providing said material; irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere; forming a barrier layer on the crystallized first semiconductor film; forming a second semiconductor film containing a noble gas element on the barrier layer without exposing the barrier layer to the air; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (19, 20, 21, 22)
-
-
23. A method of manufacturing a semiconductor device, comprising:
-
forming on an insulating surface a first semiconductor film having an amorphous structure; providing the first semiconductor film with a material comprising a metal element; heating the first semiconductor film to crystallize the first semiconductor film after providing said material; irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere; forming a barrier layer on the crystallized first semiconductor film; forming a second semiconductor film containing argon at a concentration of 1×
1018/cm3 to 1×
1022/cm3 on the barrier layer without exposing the barrier layer to the air;removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (24, 25, 26)
-
Specification