Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
First Claim
1. A method of processing a semiconductor substrate, comprisingplacing at least a portion of a surface of the semiconductor substrate in contact with a liquid, andexposing said surface portion to one or more short laser pulses so as to modify surface topography of that portion to generate surface features having heights less than about 1 micrometer.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
-
Citations
21 Claims
-
1. A method of processing a semiconductor substrate, comprising
placing at least a portion of a surface of the semiconductor substrate in contact with a liquid, and exposing said surface portion to one or more short laser pulses so as to modify surface topography of that portion to generate surface features having heights less than about 1 micrometer.
-
15. A method of processing a substrate, comprising
disposing a layer of a liquid over at least a portion of a surface of a substrate, applying a plurality of radiation pulses having pulse widths in a range of about 50 femtoseconds to about 500 femtoseconds to said portion so as to generate a plurality of surface features having heights less than about 1 micrometer.
Specification