Photonic crystal light emitting device with multiple lattices
First Claim
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1. A device comprising:
- a semiconductor stack including a light emitting layer disposed between an n-type region and a p-type region;
a photonic crystal structure formed in at least a portion of the semiconductor stack, the photonic crystal structure comprising a lattice of holes in the stack; and
a contact electrically connected to the stack;
wherein;
the photonic crystal structure includes at least two different lattices;
a first lattice of holes is formed in a first region of the stack;
a second lattice of holes is formed in a second region of the stack; and
the contact and the first and second lattices are configured such that when the device is forward biased, the contact injects current into only one of the first and second regions.
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Abstract
A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers and a second lattice formed on a second region of the semiconductor layers. The parameters of the first lattice may be selected to maximize the total radiated power from the device. The parameters of the second lattice may be selected to maximize the light extraction into a 30° cone on a surface of the stack.
74 Citations
28 Claims
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1. A device comprising:
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a semiconductor stack including a light emitting layer disposed between an n-type region and a p-type region; a photonic crystal structure formed in at least a portion of the semiconductor stack, the photonic crystal structure comprising a lattice of holes in the stack; and a contact electrically connected to the stack; wherein; the photonic crystal structure includes at least two different lattices; a first lattice of holes is formed in a first region of the stack; a second lattice of holes is formed in a second region of the stack; and the contact and the first and second lattices are configured such that when the device is forward biased, the contact injects current into only one of the first and second regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification