Photonic crystal light emitting device
First Claim
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1. A device comprising:
- a III-nitride semiconductor structure including an active region disposed between an n-type region and a p-type region, the semiconductor structure having a top side and a bottom side;
a photonic crystal structure disposed on a top side of the semiconductor structure;
a first contact electrically connected to the n-type region and a second contact electrically connected to the p-type region, wherein the first and second contacts are disposed on a bottom side of the semiconductor structure; and
at least one opening formed in the p-type region and the light emitting region, wherein the opening exposes a portion of the n-type region and wherein a connection between the n-type region and the first contact is disposed within the opening;
wherein the first contact has a top surface in contact with the n-type region and a bottom surface opposite the top surface, wherein the bottom surface has a lateral extent larger than a lateral extent of the via.
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Abstract
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
52 Citations
24 Claims
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1. A device comprising:
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a III-nitride semiconductor structure including an active region disposed between an n-type region and a p-type region, the semiconductor structure having a top side and a bottom side; a photonic crystal structure disposed on a top side of the semiconductor structure; a first contact electrically connected to the n-type region and a second contact electrically connected to the p-type region, wherein the first and second contacts are disposed on a bottom side of the semiconductor structure; and at least one opening formed in the p-type region and the light emitting region, wherein the opening exposes a portion of the n-type region and wherein a connection between the n-type region and the first contact is disposed within the opening; wherein the first contact has a top surface in contact with the n-type region and a bottom surface opposite the top surface, wherein the bottom surface has a lateral extent larger than a lateral extent of the via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification