Electromagnetic radiation emitting semiconductor chip and procedure for its production
First Claim
1. A semiconductor chip which emits electromagnetic radiation, comprising:
- an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers;
a base, on which the semiconductor layer stack is arranged; and
a mirror layer comprising a highly reflective layer, a protective layer and a joining layer, said mirror layer being arranged between the semiconductor layer stack and the base;
wherein the n-conducting semiconductor layer faces away from the base; and
wherein the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which in turn includes a plurality of planar outcoupling sub-surfaces which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and
70°
with this plane.
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Abstract
A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.
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Citations
10 Claims
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1. A semiconductor chip which emits electromagnetic radiation, comprising:
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an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers; a base, on which the semiconductor layer stack is arranged; and a mirror layer comprising a highly reflective layer, a protective layer and a joining layer, said mirror layer being arranged between the semiconductor layer stack and the base; wherein the n-conducting semiconductor layer faces away from the base; and wherein the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which in turn includes a plurality of planar outcoupling sub-surfaces which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and
70°
with this plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification