Three-dimensional memory cells
First Claim
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1. A polarized 3D-ROM (three-dimensional read-only memory) cell, comprising:
- first and second conductive layers; and
a polarized quasi-conductive layer between said first and second conductive layers, said polarized quasi-conductive layer comprising first and second sub-layers of different base materials;
whereby said polarized quasi-conductive layer has a lower resistance when the current flows in one direction than when the current flows in the opposite direction.
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Abstract
The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility. The present invention further discloses a 3D-M with seamless 3D-ROM cells. Seamless 3D-ROM can ensure a better manufacturing yield.
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Citations
8 Claims
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1. A polarized 3D-ROM (three-dimensional read-only memory) cell, comprising:
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first and second conductive layers; and a polarized quasi-conductive layer between said first and second conductive layers, said polarized quasi-conductive layer comprising first and second sub-layers of different base materials; whereby said polarized quasi-conductive layer has a lower resistance when the current flows in one direction than when the current flows in the opposite direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification