Package having bond-sealed underbump

• US 7,443,017 B2
• Filed: 06/06/2006
• Issued: 10/28/2008
• Est. Priority Date: 05/26/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Haluzak, Charles C., Truninger, Martha A., Michael, Donald L.
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US11/447,764
• Publication Number:
  US 20060292748A1
• Time in Patent Office: 875 Days
• Field of Search: 257/680, 257/E23.095
• US Class Current: 257/680
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate

Abstract

A package for containing microelectromechanical devices includes a first substrate wafer, and a second substrate wafer made of an optical quality material. An underbump is interposed between the first and second substrate wafers. The underbump is composed of a standoff region and a localized bond region. The first and second substrate wafers and the underbump define a chamber that contains at least one microelectronic device.

Claims

1. A microelectromechanical device package, comprising:

a first substrate wafer;

a second substrate wafer, the second substrate wafer composed of an optical quality material; and

an underbump interposed between the first substrate wafer and the second substrate wafer, the underbump composed of a standoff region and a localized bond region, wherein the standoff region is a dielectric material having a higher melting temperature than a material used for the localized bond region, wherein the first and second substrate wafers and underbump define a chamber, and wherein the underbump includes at least one fill port defined therein extending from an outer surface of the package to the chamber, the fill port having a metallized surface and being adapted to be sealed; and

at least one microelectronic device operatively disposed within the chamber.

2. The microelectromechanical device package of claim 1 wherein the underbump has a height ranging between about 3 μ

m and about 20 μ

m.

3. The microelectromechanical device package of claim 1 wherein the underbump is integral with one of the first substrate wafer or the second substrate wafer, and is in sealed contact with an other of the second substrate wafer or the first substrate wafer.

4. The microelectromechanical device package of claim 1 wherein the standoff region includes at least one of silica glass, phosphosilicate, polysilicon, borosilicate glass, titanium silicate glass, polysilazane, tetraethyl-ortho-silicate glass, metal-organic spin-on coatings, or mixtures thereof.

5. The microelectromechanical device package of claim 1 wherein the localized bond region includes at least one of nickel, gold, tin, alloys thereof, or mixtures thereof.

6. The microelectromechanical device package of claim 1 wherein the underbump is formed on one of the first and second substrate wafers, and the standoff region of the underbump has a face distal to the substrate wafer on which it is formed.

7. The microelectromechanical device package of claim 6 wherein the localized bond region is positioned on the distal face of the standoff region and is bonded to the other of the first and second substrate wafers.

8. The microelectromechanical device package of claim 1, further comprising a depression defined in at least one of the first or second substrate wafers.

9. The microelectromechanical device package of claim 8 wherein the depression is defined in the first substrate wafer and the underbump is defined on the first substrate wafer.

10. The microelectromechanical device package of claim 1 wherein the second substrate wafer is composed of optical quality glass.

11. The microelectromechanical device package of claim 1 wherein the chamber contains one of a functional fluid and gas sealed therein.

12. An integrated circuit, comprising:

a semiconductor substrate;

an optical quality glass substrate positioned a spaced distance from the semiconductor substrate;

an underbump interposed between the semiconductor substrate and the optical quality glass substrate, the underbump composed of a standoff region and a localized high-temperature bond region, wherein the semiconductor substrate, the optical quality glass substrate and the underbump define a chamber, wherein the standoff region is a dielectric material having a higher melting temperature than a material used for the localized high-temperature bond region, and wherein the underbump includes at least one fill port defined therein extending from an outer surface of the package to the chamber, the fill port having a metallized surface and adapted to be hermetically sealed by soldering; and

at least one microelectromechanical device operatively disposed within the chamber.

13. The integrated circuit of claim 12 wherein the material employed in the localized high-temperature bond region is solder materials.

14. The integrated circuit of claim 12 wherein the underbump is formed on the optical quality glass substrate, the standoff region has a face distal to the optical quality glass substrate, and wherein the localized high-temperature bond region is positioned on the distal face of the standoff region and is bonded to the semiconductor substrate.

15. A microelectromechanical device package, comprising:

a first substrate;

a second substrate;

means for connecting the first substrate to the second substrate, the connecting means interposed between the first and second substrates such that the first and second substrates are positioned a spaced distance from one another and define at least one chamber therebetween, wherein the connecting means includes a standoff region and a localized bond region, and wherein the standoff region is a dielectric material having a higher melting temperature than a material used for the localized bond region;

means, defined within the connecting means, for filling the chamber with at least one of a functional fluid or gas after the first and second substrates are connected; and

means for performing at least one microelectromechanical function, the microelectromechanical function performing means operatively disposed in the chamber.

16. The microelectromechanical device package of claim 15 wherein the first substrate includes a depression defined therein, and wherein the depression is bounded by the connecting means.

17. The microelectromechanical device package of claim 15 wherein the filling means extends from an exterior surface of the connecting means to the chamber, and wherein the filling means has a metallized surface.