Reliable gap-filling process and apparatus for performing the process in the manufacturing of semiconductor devices

• US 7,446,367 B2
• Filed: 05/30/2006
• Issued: 11/04/2008
• Est. Priority Date: 05/30/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yong-kyu, Jeon, Jin-ho, Kwon, Kyoung-soo
• Primary Examiner(s): Dang; Phuc T
• Application Number:
  US11/442,300
• Publication Number:
  US 20070026630A1
• Time in Patent Office: 889 Days
• Field of Search: 257/310, 257/410, 257/411, 216/60, 216/75, 438/424, 438/430
• US Class Current: 257/310
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

A reliable gap-filling process is performed in the manufacturing of a semiconductor device. An apparatus for performing the gap-filling process includes a chamber in which a wafer chuck is disposed, a plasma generator for generating plasma used to etch the wafer, an end-point detection unit for detecting the point at which the etching of the wafer is to be terminated, and a controller connected to the end-point detection unit. The end-point detection unit monitors the structure being etched at a region outside the opening that is to be filled, and generates in real time data representative of the layer that is being etched. As soon as an underlying layer is exposed and begins to be etched, an end-point detection signal is generated and the etching process is terminated. In the case in which the layer being etched is an oxide layer, a uniform etching is achieved despite any irregularity that exists in the thickness to which the oxide layer is formed.

Claims

1. A semiconductor device manufacturing apparatus comprising:

an etching chamber;

a chuck disposed in the etching chamber to support a substrate to be etched in the chamber;

a plasma generator operatively associated with the chamber to produce plasma from an etching gas, and provide the plasma within the etching chamber to etch a substrate supported on the chuck;

an end point detection unit that monitors the etching process in the etching chamber and based on the monitoring instantaneously determines when the etching process is to be terminated, the end point detection unit comprising a sensor mounted to the etching chamber and exposed to the interior of the chamber so as to sense directly a condition of the etching process as the process progresses in the etching chamber; and

a controller operatively connected to the end point detection unit and to the plasma generator so as to turn off the plasma generator when the end point detection unit determines that the etching process is to be terminated.

2. The semiconductor device manufacturing apparatus according to claim 1, wherein the the sensor is an optical sensor that senses light produced in the chamber during the etching process.

3. The semiconductor device manufacturing apparatus according to claim 2, wherein the end point detection unit further comprises an analyzer connected to the optical sensor to determine the wavelength of light sensed by the optical sensor in the chamber during the etching process.

4. The semiconductor device manufacturing apparatus according to claim 1, wherein the the sensor is a gas sensor that senses gas emitted in the chamber during the etching process.

5. The semiconductor device manufacturing apparatus according to claim 4, wherein the end point detection unit further comprises an analyzer connected to the gas sensor to determine characteristics of the gas sensed by the gas sensor in the chamber during the etching process.

6. The semiconductor device manufacturing apparatus according to claim 1, wherein the end point detection unit further comprises:

an analyzer operatively connected to the sensor to analyze the condition of the etching process detected by the sensor, and generate data representative of an analysis of the condition;

a data processor operatively connected to the analyzer so as to receive the data generated by the analyzer, configured with algorithms that process the data to determine when the etching process is to be terminated, and operative to output an end-point detection when signal when it is determined that the etching process is to be terminated; and

an interface interconnecting the data processor and the controller such that end-point detection signal when generated is transmitted to the controller.

7. The semiconductor device manufacturing apparatus according to claim 1, wherein the plasma generator comprises:

a source of the etching gas; and

a coil through which power required to excite the etching gas and thereby generate the plasma is applied.

8. The semiconductor device manufacturing apparatus according to claim 7, further comprising:

a pump connected to the chamber to evacuate the chamber;

a gate valve interposed between the pump and the chamber to selectively place an inlet of the pump in open communication with the interior of the chamber; and

a throttle valve connected to the chamber and operative to adjust the rate at which the chamber is evacuated, whereby the pressure in the chamber can be regulated.