Method of manufacturing a display device
First Claim
1. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:
- forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor;
selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface;
forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride;
forming a contact hole in the first interlayer insulating film and the second interlayer insulating film;
forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole;
forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface;
performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen;
forming a layer containing an organic compound over the first electrode and the insulating film; and
forming a second electrode over the layer containing the organic compound.
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Accused Products
Abstract
In order to suppress defect modes such as shrinkage or unevenness in light-emission in a light emitting element and to shorten a time needed for a pretreatment for forming a layer containing an organic compound (EL layer), according to the present invention, a light emitting element is formed by forming a first electrode that is electrically connected to a source region or a drain region of a thin film transistor, forming an insulating film to cover an edge portion of the first electrode, performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen, then, forming a layer containing an organic compound (EL layer) over the first electrode and the insulating film, and forming a second electrode over the layer containing an organic compound (EL layer).
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Citations
29 Claims
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1. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:
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forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor; selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface; forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride; forming a contact hole in the first interlayer insulating film and the second interlayer insulating film; forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole; forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface; performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen; forming a layer containing an organic compound over the first electrode and the insulating film; and forming a second electrode over the layer containing the organic compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:
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forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor; selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface; forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride; forming a contact hole in the first interlayer insulating film and the second interlayer insulating film; forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole; forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface; cleaning the first electrode and the insulating film; performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen; forming a layer containing an organic compound over the first electrode and the insulating film; and forming a second electrode over the layer containing the organic compound. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing a display device having a thin film transistor and a light emitting element, comprising the steps of:
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forming a first interlayer insulating film including a photosensitive organic material over the thin film transistor; selectively etching the first interlayer insulating film such that an upper edge portion of the first interlayer insulating film has a curved surface; forming a second interlayer insulating film covering the first interlayer insulating film and including at least one selected from the group consisting of a silicon nitride, a silicon oxynitride, and an aluminum oxynitride; forming a contact hole in the first interlayer insulating film and the second interlayer insulating film; forming a first electrode electrically connected to at least one of a source region and a drain region of the thin film transistor through the contact hole; forming an insulating film to cover an edge portion of the first electrode, wherein an upper edge portion of the insulating film has a curved surface; performing vacuum heating to the first electrode and the insulating film; performing a plasma treatment on the first electrode and the insulating film in an atmosphere containing argon and oxygen; forming a layer containing an organic compound over the first electrode and the insulating film; and forming a second electrode over the layer containing the organic compound. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification