Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
First Claim
1. A semiconductor power device comprising a plurality of power transistor cells surrounded by a plurality of trenches opened in a semiconductor substrate wherein:
- at least one of said cells constituting an active cell having a source region disposed next to a trenched gate having a gate material filling in said trenches electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom shielding electrode filled with a conductive material disposed below and insulated from said trenched gate;
at least one of said cells constituting a connecting cell surrounded by said trenches with a portion functioning as a connecting trench filled with said conductive material as a connecting electrode for electrically connecting between said bottom shielding electrode and a metal disposed directly on top of said connecting trench; and
at least an active cell further includes a trenched source contact opened between said trenches wherein said trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of said trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell.
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Accused Products
Abstract
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
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Citations
20 Claims
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1. A semiconductor power device comprising a plurality of power transistor cells surrounded by a plurality of trenches opened in a semiconductor substrate wherein:
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at least one of said cells constituting an active cell having a source region disposed next to a trenched gate having a gate material filling in said trenches electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom shielding electrode filled with a conductive material disposed below and insulated from said trenched gate; at least one of said cells constituting a connecting cell surrounded by said trenches with a portion functioning as a connecting trench filled with said conductive material as a connecting electrode for electrically connecting between said bottom shielding electrode and a metal disposed directly on top of said connecting trench; and at least an active cell further includes a trenched source contact opened between said trenches wherein said trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of said trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification