Bit line setup and discharge circuit for programming non-volatile memory

• US 7,453,729 B2
• Filed: 09/26/2002
• Issued: 11/18/2008
• Est. Priority Date: 02/22/2001
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Yeong-Taek
• Primary Examiner(s): Nguyen; Viet Q
• Application Number:
  US10/255,461
• Publication Number:
  US 20030021154A1
• Time in Patent Office: 2,245 Days
• Field of Search: 365/185.18, 365/185.25, 365/185.11, 365/189.16, 365/203, 365/204
• US Class Current: 365/185.18
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/24 Bit-line control circuits
• CPC Class Codes: G11C 16/30 Power supply circuits

Abstract

A NAND EEPROM having a shielded bit line architecture reduces supply voltage and ground noise resulting from charging or discharging bit lines. The EEPROM has a PMOS pull-up transistor and an NMOS pull down transistor connected to a virtual power node. A control circuit for charging or discharging bit lines controls the gate voltage of the PMOS or NMOS transistor to limit peak current when charging or discharging bit lines via the virtual power node. In particular, the control circuit operates the PMOS or NMOS transistor in a non-saturation mode to limit current. One such control circuit creates a current mirror or applies a reference voltage to control gate voltages. A programming method sets up bit lines by pre-charging unselected bit lines via the PMOS pull-up transistor having controlled gate voltage while latches in the programming circuitry charge or discharge selected bit lines according to respective data bits being stored. Another bit line setup includes two stages. A first stage pre-charges all bit lines via PMOS pull-up, and the second stage uses the latches to discharge or leave charged the selected bit lines depending on respective data bits being stored. The gate voltages of NMOS transistors in the programming circuitry can be controlled to reduce noise caused by discharging selected bit lines through the latches.

Claims

1. A programming method for a non-volatile memory, comprising:

pre-charging a plurality of bit lines to a first voltage, wherein the pre-charging comprises operating a switch that is between a supply voltage and the plurality of bit lines to limit peak current flowing through the switch to the plurality of bit lines; and

applying a second voltage to a selected word line to program one or more selected memory cells coupled to the selected word line, wherein the first voltage, assigned to a non-selected page and bit lines connected to memory cells that are in a selected page but not to be programmed, remains on one of the bit lines and prevents programming of a memory cell coupled to that bit line and the selected word line.

2. The method of claim 1, wherein the switch comprises a transistor and operating the switch comprises controlling the transistor to conduct less than a saturation current of the transistor.

3. The method of claim 1, wherein the switch comprises a transistor and operating the switch comprises connecting the transistor into a current mirror circuit that limits the current through the transistor.

4. The method of claim 1, wherein the pre-charging charges all bit lines that are connected to memory cells that are connected to the selected word line.

5. The method of claim 4, further comprising discharging a selected set of the bit lines, the selected set of bits lines connected to memory cell to be programmed.

6. The method of claim 5, wherein discharging comprises operating a transistor that conducts a current from the selected bit lines so that the transistor conducts les than a saturation current of the transistor.

7. The method of claim 1, wherein the pre-charging comprises only charging unselected bit lines.

8. The method of claim 1, wherein the first voltage is less than the supply voltage.