Flip chip light emitting diode devices having thinned or removed substrates
First Claim
1. A method for fabricating a flip-chip light emitting diode device, the method including:
- depositing epitaxial layers on a growth substrate to produce an epitaxial wafer;
fabricating a plurality of light emitting diode devices on the epitaxial wafer;
dicing the epitaxial wafer to generate a device die;
flip chip bonding the device die to a mount, the flip chip bonding including securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount; and
subsequent to the flip chip bonding, reducing a thickness of the growth substrate of the device die.
8 Assignments
0 Petitions
Accused Products
Abstract
In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.
-
Citations
26 Claims
-
1. A method for fabricating a flip-chip light emitting diode device, the method including:
-
depositing epitaxial layers on a growth substrate to produce an epitaxial wafer; fabricating a plurality of light emitting diode devices on the epitaxial wafer; dicing the epitaxial wafer to generate a device die; flip chip bonding the device die to a mount, the flip chip bonding including securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount; and subsequent to the flip chip bonding, reducing a thickness of the growth substrate of the device die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A method for fabricating a flip-chip light emitting diode device, the method including:
-
depositing epitaxial layers on a growth substrate to produce an epitaxial wafer; fabricating a plurality of light emitting diode devices on the epitaxial wafer; dicing the epitaxial wafer to generate a device die; flip chip bonding the device die to a mount, the flip chip bonding including securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount; subsequent to the flip chip bonding, reducing a thickness of the growth substrate of the device die by one of thinning and removing the growth substrate; and subsequent to the thinning or removing of the growth substrate, forming a back-side electrode to one of the thinned growth substrate and an epitaxial layer exposed by the removing of the growth substrate. - View Dependent Claims (22, 23)
-
-
24. A method for improving light emission of a flip-chip bonded light emitting diode device that is flip chip bonded to a mount, the method including:
thinning or removing a growth substrate of the light emitting diode device, the growth substrate of the flip-chip bonded light emitting diode device being arranged distal from the mount, the thinning or removing being performed while epitaxial layers of the light emitting diode device are flip chip bonded to the mount, the flip chip bonding effecting a securing of the light emitting diode device to the mount during the thinning or removing. - View Dependent Claims (25, 26)
Specification