High K dielectric material and method of making a high K dielectric material

• US 7,456,064 B2
• Filed: 11/24/2003
• Issued: 11/25/2008
• Est. Priority Date: 05/28/2002
• Status: Expired due to Fees

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Inventors: Manchanda, Lalita, Green, Martin Laurence
• Primary Examiner(s): MENZ, LAURA MARY
• Application Number:
  US10/718,536
• Publication Number:
  US 20040099899A1
• Time in Patent Office: 1,828 Days
• Field of Search: 438/240, 438/287, 438/689
• US Class Current: 438/240
• CPC Class Codes: C23C 14/06 characterised by the coating material C23C14/0021 , C23C14/04 take precedence
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02321 introduction of substances into an already existing insulating layer H01L21/02227 and subgroups take precedence
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31683 of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Claims

1. A method of fabricating a dielectric material, said method comprising:

incorporating a Group V element in a Group III metal oxide, wherein said dielectric material is deposited in an atmosphere comprising a mixture of oxygen and nitrogen having an oxygen-to-nitrogen ratio ranging from about 24;

6 to about 18;

12.

2. A method according to claim 1, wherein said Group III metal oxide is aluminum oxide.

3. A method according to claim 1, wherein said Group V element is selected from the group consisting of nitrogen and phosphorous.

4. A method according to claim 2, wherein said Group V element is selected from the group consisting of nitrogen and phosphorous.

5. A method according to claim 1, wherein said mixture of oxygen and nitrogen has an oxygen-to-nitrogen ratio of about 18:

12.

6. A method according to claim 1, wherein said dielectric material is formed by a technique selected from the group consisting of reactive sputtering, annealing, atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), plasma nitridation, and oxidation of metal nitrides.

7. A method according to claim 1, comprising forming the dielectric material on a substrate using the oxygen and the nitrogen from said atmosphere.

8. A method according to claim 4, wherein:

said dielectric material is formed by a technique selected from the group consisting of reactive sputtering, annealing, atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), plasma nitridation, and oxidation of metal nitrides; and

the method comprises the step of forming the dielectric material on a substrate using the oxygen and the nitrogen from said atmosphere.

9. A method according to claim 8, wherein said mixture of oxygen and nitrogen has an oxygen-to-nitrogen ratio of about 18:

12.