Light-emitting semiconductor device

• US 7,456,435 B2
• Filed: 11/22/2004
• Issued: 11/25/2008
• Est. Priority Date: 11/26/2003
• Status: Expired due to Fees

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Sato, Masahiro, Otsuka, Koji, Aoyagi, Hidekazu
• Primary Examiner(s): Wilson; Allan R.
• Application Number:
  US10/994,922
• Publication Number:
  US 20050110029A1
• Time in Patent Office: 1,464 Days
• Field of Search: 257/97, 257/13, 257/E33.046, 257/E33.027, 257/E33.034, 257/E33.033, 257/E33.028, 257/E49.001, 257/E49.004, 257/79, 257/94, 257/E33.01
• US Class Current: 257/97
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

Claims

1. A light-emitting semiconductor device of improved efficiency, comprising:

(a) a substrate made from electrically conducting material, the substrate having a pair of opposite major surfaces;

(b) a first compound semiconductor layer of a first conductivity type formed on one major surface of the substrate;

(c) an active layer of a compound semiconductor on the first compound semiconductor layer;

(d) a transparent second compound semiconductor layer of a second conductivity type, opposite to the first conductivity type, on the active layer;

(e) a transparent window layer on the second compound semiconductor layer, the window layer being a lamination of alternating first and second sublayers of different compound semiconductors, each first sublayer of the window layer being from 15 nanometers to 500 nanometers thick, each second sublayer of the window layer being from 0.5 nanometer to 5.0 nanometers thick, wherein each first sub layer of the window layer is fabricated from a nitride semiconductor of the second conductivity type containing aluminum in a first proportion that is equal to or greater than zero, wherein each second sublayer of the window layer is fabricated from a nitride semiconductor containing aluminum in a second proportion that is greater than the first proportion, wherein the compound semiconductors of the alternating first and second sublayers of the window layer are chosen to create two-dimensional carrier gas layers in the first sublayers due to heterojunctions between the first and the second sublayers, wherein each first sublayer of the window layer is less thick than the second compound semiconductor layer, and wherein each second sublayer of the window layer contains an impurity that determines the second conductivity type;

(f) a first electrode disposed on a part of the window layer so as to permit emission of light radiated from the active layer through the window layer, the first electrode being formed in direct contact with the window layer and comprising a metal pad for connection to external circuitry; and

(g) a second electrode electrically coupled to the other major surface of the substrate.

2. A light-emitting semiconductor device as defined in claim 1, wherein the second compound semiconductor layer has a bandgap greater than that of the active layer, and a thickness greater than each sublayer of the window layer.

3. A light-emitting semiconductor device as defined in claim 1, wherein each first sublayer of the window layer is made from a nitride semiconductor defined as:

Al_aM_bGa_1-a-bN

where M is at least either indium or boron;

a is equal to or greater than zero and less than one;

b is equal to or greater than zero and less than one; and

the sum of a and b is equal to or less than one, and wherein each second sublayer of the window layer is made from a nitride semiconductor defined as;

Al_xM_yGa_1-x-yN

where M is at least either indium or boron;

x is greater than zero, equal to or less than one, and greater than a in the formula of nitride semiconductors for the first sublayer;

y is equal to or greater than zero and less than one; and

the sum of x and y is equal to or less than one.

4. A light-emitting semiconductor device as defined in claim 1, wherein the first conductivity type is p-type, and the second conductivity type n-type.