Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a source region and a drain region disposed on a semiconductor substrate;
a plurality of fins which interconnect the source region and the drain region;
a plurality of first gate electrodes, each first gate electrode disposed on the semiconductor substrate and to one side face of each fin;
a plurality of second gate electrodes, each second gate electrode disposed on the semiconductor substrate and to the other side face of the fin to face a respective of the first gate electrodes with respect to the fin, and separated from the first gate electrodes;
a plurality of first pad electrodes connected to respective of the first gate electrodes;
a first wiring which interconnects the plurality of first pad electrodes;
a plurality of second pad electrodes connected to respective of the second gate electrodes; and
a second wiring which interconnects the plurality of second pad electrodes.
2 Assignments
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Accused Products
Abstract
A semiconductor device comprising a multi Fin-FET structure capable of suppressing short channel effects, controlling a threshold voltage, driving a high current, and operating in a high-speed comprises a source region and a drain region disposed on a semiconductor substrate, a plurality of fins interconnecting the source region and drain region, a first gate electrode disposed on the semiconductor substrate and to one side face of each fin, a second gate electrode disposed on the semiconductor substrate and to the other side face of the fin to face the first gate electrode, and separated from the first gate electrode, a plurality of first pad electrodes connected to respective first gate electrode, a first wiring interconnecting the plurality of first pad electrodes, a plurality of second pad electrodes connected to respective second gate electrode, and a second wiring interconnecting the plurality of second pad electrodes.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a source region and a drain region disposed on a semiconductor substrate; a plurality of fins which interconnect the source region and the drain region; a plurality of first gate electrodes, each first gate electrode disposed on the semiconductor substrate and to one side face of each fin; a plurality of second gate electrodes, each second gate electrode disposed on the semiconductor substrate and to the other side face of the fin to face a respective of the first gate electrodes with respect to the fin, and separated from the first gate electrodes; a plurality of first pad electrodes connected to respective of the first gate electrodes; a first wiring which interconnects the plurality of first pad electrodes; a plurality of second pad electrodes connected to respective of the second gate electrodes; and a second wiring which interconnects the plurality of second pad electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification