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Semiconductor device and manufacturing method thereof

  • US 7,456,472 B2
  • Filed: 12/07/2004
  • Issued: 11/25/2008
  • Est. Priority Date: 09/30/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a source region and a drain region disposed on a semiconductor substrate;

    a plurality of fins which interconnect the source region and the drain region;

    a plurality of first gate electrodes, each first gate electrode disposed on the semiconductor substrate and to one side face of each fin;

    a plurality of second gate electrodes, each second gate electrode disposed on the semiconductor substrate and to the other side face of the fin to face a respective of the first gate electrodes with respect to the fin, and separated from the first gate electrodes;

    a plurality of first pad electrodes connected to respective of the first gate electrodes;

    a first wiring which interconnects the plurality of first pad electrodes;

    a plurality of second pad electrodes connected to respective of the second gate electrodes; and

    a second wiring which interconnects the plurality of second pad electrodes.

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