Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby
First Claim
1. A filter window for EUV lithography comprising:
- a pellicle comprising a first layer and a second layer on top of the first layer, wherein the first layer comprising a material selected from the group consisting of AlN, Ru, Ir, Au, SiN, Rh, and combinations thereof, and wherein the second layer includes elevated bars; and
a wire structure configured to support said pellicle.
2 Assignments
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Accused Products
Abstract
A filter window for EUV lithography includes a pellicle, and a wire structure for supporting the pellicle. The pellicle includes a first layer that includes at least one of AlN, Ru, Ir, Au, SiN, Rh. The pellicle has a very low EUV absorption in combination with a minimal oxidation rate. The thickness of the pellicle may be between 30 nm and 100 nm. It can be easily checked that absorption of EUV radiation of such a thin pellicle is equal to known filter windows, i.e. about 50% at a wavelength of 13.5 nm wavelength, but the oxidation of the pellicle according to the invention is much smaller. The filter window can for example be used to separate a Projection Optics box and a wafer compartment of the apparatus or to shield a reticle from particle contamination.
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Citations
18 Claims
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1. A filter window for EUV lithography comprising:
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a pellicle comprising a first layer and a second layer on top of the first layer, wherein the first layer comprising a material selected from the group consisting of AlN, Ru, Ir, Au, SiN, Rh, and combinations thereof, and wherein the second layer includes elevated bars; and a wire structure configured to support said pellicle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A lithographic projection apparatus comprising:
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an illumination system configured to condition a beam of radiation; a mask table provided with a mask holder configured to hold a mask; a substrate table provided with a substrate holder configured to hold a substrate; a projection system configured to image an irradiated portion of the mask onto a target portion of the substrate, and a filter window comprising; a pellicle having a first layer and a second layer on top of the first layer, wherein the first layer comprising a material selected from the group consisting of AlN, Ru, Ir, Au, SiN, Rh and combinations thereof and wherein the second layer includes elevated bars; and a wire structure configured to support said pellicle. - View Dependent Claims (12, 13, 14, 15)
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16. A device manufacturing method comprising:
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patterning a beam of radiation with a pattern in its cross section; projecting the patterned beam of radiation onto a target portion of a layer of radiation sensitive material on a substrate, and filtering the beam of radiation using a filter, the filter including a pellicle comprising a first layer and a second layer on top of the first layer, wherein the first layer comprising a material selected from the group consisting of AlN, Ru, Ir, Au, SiN, Rh, and combinations thereof and wherein the second layer includes elevated bars, and a wire structure for supporting said pellicle. - View Dependent Claims (17, 18)
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Specification