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Memory device and method of operating the same

  • US 7,457,181 B2
  • Filed: 11/16/2006
  • Issued: 11/25/2008
  • Est. Priority Date: 11/17/2005
  • Status: Expired due to Fees
First Claim
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1. A memory device having a memory cell, a local input/output line pair and a global input/output line pair configured for data transfer, the memory device comprising:

  • a sense amplifier configured to detect and amplify a potential difference between the global input/output line pair;

    a detecting unit configured to generate a detect signal based on a detection of the potential difference between the global input/output line pair;

    a precharge circuit configured to precharge the global input/output line pair to a predetermined voltage level; and

    a detect control signal generating unit configured to generate a detection sense amplifier control signal for disabling the sense amplifier and a detection precharge control signal, separate and distinct from the detection sense amplifier control signal, for enabling the precharge circuit in response to the detect signal.

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