Capacitative pressure sensor with ceramic membrane

• US 7,458,272 B2
• Filed: 07/18/2007
• Issued: 12/02/2008
• Est. Priority Date: 10/18/2004
• Status: Expired due to Fees

• Current Assignee: Precision Mechatronics Pty Ltd
• Original Assignee: Silverbrook Research Pty Limited
• Inventors: Silverbrook, Kia, Mallinson, Samuel George
• Primary Examiner(s): Allen, Andre J.
• Assistant Examiner(s): JENKINS, JERMAINE L
• Application Number:
  US11/779,846
• Publication Number:
  US 20080011088A1
• Time in Patent Office: 503 Days
• Field of Search: 73700-756, 3612831-2834
• US Class Current: 73/729.2
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0075 using a ceramic diaphragm, e.g. alumina, fused quartz, glass

Abstract

A pressure sensor for sensing a fluid pressure in harsh environments such as the air pressure in a tire formed on a wafer substrate. Associated circuitry deposited in CMOS layers on the wafer substrate has a conductive layer at least partially overlying the associated circuitry, the conductive layer forming a first electrode of the capacitative sensor. A conductive membrane at least partially overlies the conductive layer, and is spaced from it to form a second electrode of the capacitative sensor. The conductive membrane separates fluid at a reference pressure and fluid at the pressure to be sensed such that the associated circuitry is configured to convert the deflection of the conductive membrane into an output signal indicative of the fluid pressure. The conductive membrane is at least partially formed from a ceramic material to provide corrosion and wear resistance. Metal ceramics can be deposited as a thin membrane with sufficient flexibility for sensing pressure and are generally well suited to semiconductor fabrication processes and electrically conductive so they can be used in capacitative type pressure sensors.

Claims

1. A capacitative pressure sensor for sensing a fluid pressure, the capacitative pressure sensor comprising:

a wafer substrate;

associated circuitry deposited in CMOS layers on the wafer substrate;

a conductive layer at least partially overlying the associated circuitry, the conductive layer forming a first electrode of the capacitative sensor; and

,

a conductive membrane at least partially overlying and spaced from the conductive layer, the conductive membrane forming a second electrode of the capacitative sensor, the conductive membrane separating fluid at a reference pressure and fluid at the pressure to be sensed such that the associated circuitry is configured to convert the deflection of the conductive membrane into an output signal indicative of the fluid pressure;

wherein,

the conductive membrane is at least partially formed from a ceramic material.

2. A pressure sensor according to claim 1 wherein the ceramic material is a metal nitride.

3. A pressure sensor according to claim 2 wherein the conductive membrane is titanium nitride, tantalum nitride, or vanadium nitride.

4. A pressure sensor according to claim 2 wherein, the conductive membrane is be formed from mixed metal nitrides.

5. A pressure sensor according to claim 4 wherein the mixed metal nitrides are titanium silicon nitride, tantalum silicon nitride, vanadium silicon nitride, titanium aluminum silicon nitride, or tantalum aluminum silicon nitride.

6. A pressure sensor according to claim 4 wherein the conductive layer is less than 50 microns from the conductive membrane in its undeflected state.

7. A pressure sensor according to claim 1 formed on the wafer substrate using lithographically masked etching and deposition techniques.

8. A pressure sensor according to claim 1 wherein the conductive membrane is less than 0.1 grams.

9. A pressure sensor according to claim 1 adapted to sense the air pressure within a pneumatic tire.

10. A pressure sensor according to claim 1 further comprising a passivation layer at least partially deposited over the conductive layer.

11. A pressure sensor according to claim 1 wherein the conductive membrane is approximately 0.5 μ

m thick.

12. A pressure sensor according to claim 1 wherein the conductive membrane is circular with a diameter less than 500 microns.

13. A pressure sensor according to claim 1 powered by radio waves transmitted from a remote source.

14. A pressure sensor according to claim 1 wherein the conductive membrane is a laminate having at least two layers having at least one of the layers is ceramic material.

15. A pressure sensor according to claim 14 wherein the layers within the laminate are be formed from the deposition of different metal ceramics.

16. A pressure sensor according to claim 15 wherein the metal ceramics are metal nitrides or mixed metal nitrides.

17. A pressure sensor according to claim 16 wherein the metal ceramics are titanium nitride, titanium aluminum nitride, tantalum silicon nitride, titanium aluminum silicon nitride, or tantalum aluminum silicon nitride.

18. A pressure sensor according to claim 14 wherein one or more of the layers of the laminate is metal.

19. A pressure sensor according to claim 18 wherein the metal is titanium, tantalum or vanadium.

20. A pressure sensor according to claim 1 further comprising a second membrane being sealed from the fluid pressure;

wherein,

the associated circuitry converts any deflection of the second membrane into an adjustment of the output signal to compensate for the temperature of the sensor.