Chemical mechanical polishing pad and methods of making and using same

• US 7,458,885 B1
• Filed: 08/15/2007
• Issued: 12/02/2008
• Est. Priority Date: 08/15/2007
• Status: Expired due to Fees

• Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Original Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Inventors: Palaparthi, Ravichandra V.
• Primary Examiner(s): Nguyen; Dung Van
• Application Number:
  US11/838,954
• Time in Patent Office: 475 Days
• Field of Search: 451/11, 451/28, 451/41, 451/59, 451526-539
• US Class Current: 451/527
• CPC Class Codes: B24B 37/24 characterised by the composition or properties of the pad materials
• CPC Class Codes: B24B 37/26 characterised by the shape of the lapping pad surface, e.g. grooved

Abstract

Shape memory chemical mechanical polishing pads are provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided are methods of making the shape memory chemical mechanical polishing pads and for using them to polish substrates.

Claims

1. A shape memory chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

comprising;

a polishing layer set in a densified state;

wherein the polishing layer comprises a shape memory matrix material transformable between an original shape and a programmed shape;

wherein the polishing layer exhibits an original thickness, OT, when the shape memory matrix material is in its original shape;

wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is fixed in the programmed shape;

wherein the DT is ≦

80% of the OT; and

,

wherein the polishing layer has a polishing surface adapted for polishing the substrate.

2. The shape memory chemical mechanical polishing pad of claim 1, wherein the polishing layer has a densified thickness of 20 to 150 mils.

3. The shape memory chemical mechanical polishing pad of claim 1, wherein the polishing surface exhibits macrotexture to facilitate polishing the substrate, wherein the macrotexture comprises at least one of perforations and grooves.

4. The shape memory chemical mechanical polishing pad of claim 1, wherein the shape memory matrix material forms a reticulated network.

5. The shape memory chemical mechanical polishing pad of claim 1, wherein the polishing layer further comprises a plurality of microelements selected from hollow core polymeric materials, liquid filled hollow core polymeric materials, water soluble materials and an insoluble phase material.

6. The shape memory chemical mechanical polishing pad of claim 5, wherein the plurality of microelements comprise hollow core polymeric materials uniformly distributed throughout the polishing layer.

7. The shape memory chemical mechanical polishing pad of claim 1, wherein the substrate is a semiconductor substrate.

8. A method for producing a shape memory chemical mechanical polishing pad, comprising:

providing a shape memory matrix material transformable between an original shape and a programmed shape;

preparing a polishing layer in an original state exhibiting an original thickness, OT, comprising the shape memory matrix material in the original shape;

subjecting the polishing layer to an external force;

setting the shape memory matrix material to the programmed shape to provide the polishing layer in a densified state, wherein the polishing layer exhibits a densified thickness, DT;

removing the external force;

wherein the DT is ≦

80% of the OT; and

,

wherein the polishing layer has a polishing surface adapted for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.

9. The method of claim 8, further comprising:

providing a plurality of microelements;

dispersing the plurality of microelements in the shape memory matrix material;

heating the polishing layer to a temperature, T, above the glass transition temperature, T_g, for the shape memory matrix material;

wherein the external force is an axial force which axially compresses the polishing layer to the densified thickness, DT, while maintaining the temperature of the polishing layer above the T_g of the shape memory matrix material; and

wherein the shape memory matrix material is set in the programmed shape by cooling the polishing layer to a temperature below the T_g of the shape memory matrix material, while maintaining the axial force.

10. A method of polishing a substrate, comprising:

providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

providing a shape memory chemical mechanical polishing pad, wherein the polishing pad comprises a polishing layer in a densified state, wherein the polishing layer comprises a shape memory matrix material transformable from an original shape and a programmed shape;

wherein the polishing layer in its original state exhibits an original thickness, OT, when the shape memory matrix material is in the original shape;

wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is in the programmed shape; and

wherein the DT is ≦

80% of the OT; and

,

creating dynamic contact between a polishing surface of the polishing layer and the substrate to polish a surface of the substrate.

11. The method of claim 10, further comprising:

conditioning the polishing surface of the polishing layer by exposing at least a portion of the polishing layer proximate the polishing surface to an activating stimulus;

wherein the portion of the polishing layer proximate the polishing surface exposed to the activating stimulus transitions from the densified state to a recovered state.