Metal nanoparticle photonic bandgap device in SOI method

• US 7,459,324 B1
• Filed: 08/23/2007
• Issued: 12/02/2008
• Est. Priority Date: 01/13/2006
• Status: Expired due to Fees

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Rodgers, John Scott, Ptasinski, Joanna N., Russell, Stephen
• Primary Examiner(s): Mulpuri; Savitri
• Application Number:
  US11/844,192
• Time in Patent Office: 467 Days
• Field of Search: 438/28, 438/31, 438/479, 359/321, 359/333, 359/344, 385129-132, 385/14, 977773-775
• US Class Current: 438/31
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: Y10S 977/773 Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

A Metal Nanoparticle Photonic Bandgap Device in SOI Method (NC#098884). The method includes providing a substrate having a semiconductor layer over an insulator layer, operatively coupling the substrate to a photonic bandgap structure having at least one period, wherein the photonic bandgap structure is adapted to receive and output light along a predetermined path, and operatively coupling the photonic bandgap structure and the substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein the at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

Claims

1. A method, comprising:

providing a substrate having a semiconductor layer over an insulator layer;

operatively coupling said substrate to a photonic bandgap structure having at least one period, wherein said photonic bandgap structure is adapted to receive and output light along a predetermined path; and

operatively coupling said photonic bandgap structure and said substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein said at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

2. The method of claim 1, wherein said photonic bandgap structure comprises a structure selected from the group consisting of 2D photonic bandgap structure, 3D photonic bandgap structure and 3D photonic bandgap structure having a funnel waveguide configuration.

3. The method of claim 1, wherein a desired ratio of radii between adjacent metal nanoparticles is represented by the following equation:

K=(R_i+1)/(R_i)=⅓

;

where K=desired ratio of radii between adjacent metal nanoparticles;

R_i+1=radius of a smaller, adjacent nanoparticle

R_i=radius of a larger, adjacent nanoparticle.

4. The method of claim 1, wherein a desired distance between spheres is calculated by considering the desired spectral maximum of the field enhancement.

5. The method of claim 1, wherein said metal nanoparticle structure comprises a three-element, single-ascending configuration.

6. The method of claim 1, wherein said metal nanoparticle structure comprises a six-element, double-ascending configuration.

7. The method of claim 1, wherein said metal nanoparticle structure comprises a five-element, double-ascending configuration.

8. The method of claim 1, wherein said metal nanoparticle structure comprises at least three metal nanoparticles having spherical shapes and a light-transparent medium.

9. The method of claim 1, wherein said at least three metal nanoparticles comprise a highly conductive material selected from the group consisting of silver (Ag), gold (Au), aluminum (Al), tungsten (W), titanium (Ti), platinum (Pt), rhodium (Rh), copper (Cu), tin (Sn), 99% Al-1% silicon (Si), Rh—

Al, indium tin oxide (ITO), tin oxide, and titanium silicide.

10. The method of claim 1, wherein said light-transparent medium comprises a dielectric material selected from the group consisting of indium tin oxide (ITO), tin oxide, silica (SiO₂), alumina (Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), calcium fluoride (CaF₂), magnesium fluoride (MgF₂), lanthanum fluoride (LaF₃), aluminum fluoride (AlF₃) and transparent polyimides.

11. The method of claim 1, further comprising a procedure of operatively coupling at least one electronic component to said photonic bandgap structure and said substrate, adapted to receive amplified light.

12. A method, comprising:

providing a substrate having a semiconductor layer over an insulator layer;

operatively coupling said substrate to a photonic bandgap structure having at least one period, wherein said photonic bandgap structure is adapted to receive and output light along a predetermined path;

operatively coupling said photonic bandgap structure and said substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein said at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light; and

operatively coupling said photonic bandgap structure and said substrate to at least one electronic component adapted to receive amplified light.

13. The method of claim 12, wherein said metal nanoparticle structure comprises a three-element, single-ascending configuration.

14. The method of claim 12, wherein said metal nanoparticle structure comprises a six-element, double-ascending configuration.

15. The method of claim 12, wherein said metal nanoparticle structure comprises a five-element, double-ascending configuration.

16. The method of claim 12, wherein said metal nanoparticle structure comprises at least three metal nanoparticles having spherical shapes and a light-transparent medium.

17. The method of claim 12, wherein said at least three metal nanoparticles comprise a highly conductive material selected from the group consisting of silver (Ag), gold (Au), aluminum (Al), tungsten (W), titanium (Ti), platinum (Pt), rhodium (Rh), copper (Cu), tin (Sn), 99% Al-1% silicon (Si), Rh—

Al, indium tin oxide (ITO), tin oxide, and titanium silicide.

18. The method of claim 12, wherein said light-transparent medium comprises a dielectric material selected from the group consisting of indium tin oxide (ITO), tin oxide, silica (SiO₂), alumina (Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), calcium fluoride (CaF₂), magnesium fluoride (MgF₂), lanthanum fluoride (LaF₃), aluminum fluoride (AlF₃) and transparent polyimides.

19. A method, comprising:

providing a substrate having a semiconductor layer over an insulator layer;

operatively coupling said substrate to a photonic bandgap structure having at least one period, wherein said photonic bandgap structure is adapted to receive and output light along a predetermined path;

forming a metal nanoparticle structure by operatively coupling a light-transparent medium adapted to receive light rays and output light to at least three metal nanoparticles having spherical shapes of different radii, wherein said at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light;

operatively coupling said photonic bandgap structure and said substrate to said metal nanoparticle structure; and

operatively coupling said photonic bandgap structure and said substrate to at least one electronic component adapted to receive amplified light.