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Metal nanoparticle photonic bandgap device in SOI method

  • US 7,459,324 B1
  • Filed: 08/23/2007
  • Issued: 12/02/2008
  • Est. Priority Date: 01/13/2006
  • Status: Expired due to Fees
First Claim
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1. A method, comprising:

  • providing a substrate having a semiconductor layer over an insulator layer;

    operatively coupling said substrate to a photonic bandgap structure having at least one period, wherein said photonic bandgap structure is adapted to receive and output light along a predetermined path; and

    operatively coupling said photonic bandgap structure and said substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein said at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

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