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Method for fabricating and separating semiconductor devices

  • US 7,459,373 B2
  • Filed: 11/15/2005
  • Issued: 12/02/2008
  • Est. Priority Date: 11/15/2004
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating and separating semiconductor structures comprising the steps of:

  • (a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective layer;

    (b) forming a partial mask layer over at least a part of the partially formed devices;

    (c) etching the connective layer to separate the devices; and

    (d) removing the partial mask layer,wherein an Au layer can be etched away with gold etchant, such as potassium chloride.

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