Method for fabricating and separating semiconductor devices
First Claim
1. A method of fabricating and separating semiconductor structures comprising the steps of:
- (a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective layer;
(b) forming a partial mask layer over at least a part of the partially formed devices;
(c) etching the connective layer to separate the devices; and
(d) removing the partial mask layer,wherein an Au layer can be etched away with gold etchant, such as potassium chloride.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of fabricating and separating semiconductor structures comprises the steps of: (a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective layer; (b) forming a partial mask layer over at least a part of the partially formed devices; (c) etching the connective layer to separate the devices; and (d) removing the partial mask layer. Advantages of the invention include higher yield than conventional techniques. In addition, less expensive equipment can be used to separate the devices. The result is a greater production of devices per unit of time and per dollar.
-
Citations
21 Claims
-
1. A method of fabricating and separating semiconductor structures comprising the steps of:
-
(a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective layer; (b) forming a partial mask layer over at least a part of the partially formed devices; (c) etching the connective layer to separate the devices; and (d) removing the partial mask layer, wherein an Au layer can be etched away with gold etchant, such as potassium chloride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of fabricating a semiconductor device, comprising the steps of:
-
(a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising, a plurality of partially formed devices; (b) depositing a metal laser over the partially formed semiconductor structure; (c) finishing forming the semicondudor structure; (d) forming a mask layer over the surface of the metal layer, the mask layer formed in a plurality of rectangles leaving lanes where each of the devices are desired to be separated from each other; (e) removing the metal layer where the lanes are positioned, the mask layer protecting the metal layer under the rectangles; (f) separating the devices proximate to where the metal layer was removed; and (f) removing the mask layer from the devices. - View Dependent Claims (11)
-
-
12. A method of fabricating and separating semiconductor structures comprising the steps of:
-
(a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure a plurality of partially formed devices; (b) forming a partial mask layer over the surface of the partially formed semiconductor structure, the partial mask layer formed in a grid pattern leaving openings where each of the devices are desired to be formed; (c) depositing a metal layer over the partially formed semiconductor structure in the openings where the surface is not covered by the partial mask layer; (d) finishing forming the semiconductor structure; (e) removing the partial mask layer; and (f) separating the devices proximate to where the partial mask layer was removed. - View Dependent Claims (13, 14, 15, 17, 20, 21)
-
- 16. The method of c aim 12, further comprising the step of treating a GaN layer of the devices to create undulations thereon.
Specification