Semiconductor indicator for voltage diagnostics in power amplifiers
First Claim
1. An indicator for voltage diagnostics in a power amplifier comprising:
- a first transistor having an electrically active periphery; and
a second transistor having an electrically active periphery less than the electrically active periphery of the first transistor and thermally coupled to the first transistor;
wherein a voltage of a node on the first transistor is detected using the second transistor; and
wherein a ratio between the electrically active periphery of the first transistor and the electrically active periphery of the second transistor is large enough to at least one of;
reduce a parasitic capacitance between the first transistor and the second transistor, andincrease a sensitivity of the second transistor.
1 Assignment
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Accused Products
Abstract
A semiconductor indicator for quantitatively diagnosing voltage conditions in high power transistor devices is provided. The semiconductor indicator includes a first transistor and a second transistor, where an electrically active periphery of the second transistor is less than an electrically active periphery of the first transistor. The transistors are thermally coupled to one another and may be in close proximity. The second transistor detects the voltage of a node on the first transistor and may be monitored by infrared imaging. The breakdown voltage characteristic of the second transistor may not substantially change as the temperature in the first transistor increases. An optional control circuit monitors and detects the output voltage of the first transistor.
6 Citations
20 Claims
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1. An indicator for voltage diagnostics in a power amplifier comprising:
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a first transistor having an electrically active periphery; and a second transistor having an electrically active periphery less than the electrically active periphery of the first transistor and thermally coupled to the first transistor; wherein a voltage of a node on the first transistor is detected using the second transistor; and wherein a ratio between the electrically active periphery of the first transistor and the electrically active periphery of the second transistor is large enough to at least one of; reduce a parasitic capacitance between the first transistor and the second transistor, and increase a sensitivity of the second transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for voltage diagnostics in a power amplifier, the method comprising:
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detecting a voltage of a node on a first transistor using a second transistor, the second transistor having an electrically active periphery less than an electrically active periphery of the first transistor and thermally coupled to the first transistor; and wherein a ratio between the electrically active periphery of the first transistor and the electrically active periphery of the second transistor is large enough to at least one of; reduce a parasitic capacitance between the first transistor and the second transistor, and increase a sensitivity of the second transistor. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification