Single-wafer-processing type CVD apparatus

• US 7,462,245 B2
• Filed: 07/14/2003
• Issued: 12/09/2008
• Est. Priority Date: 07/15/2002
• Status: Expired due to Term

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Shimizu, Akira, Fukuda, Hideaki, Kanayama, Hiroki
• Primary Examiner(s): Zervigon; Rudy
• Application Number:
  US10/618,900
• Publication Number:
  US 20040011292A1
• Time in Patent Office: 1,975 Days
• Field of Search: 118/715, 118/723.VE, 118/726, 118/724
• US Class Current: 118/726
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.

Claims

1. A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed, which comprises:

a reaction chamber;

a susceptor for placing said object thereon, which is provided inside said reaction chamber;

a shower plate for emitting a jet of reaction gas to said object, which is disposed parallel and opposing to said susceptor;

an orifice for bringing a liquid raw material for deposition and a carrier gas into said reaction chamber, which is formed through a ceiling of said reaction chamber;

an evaporation plate for vaporizing said liquid raw material, which is disposed in a space between said ceiling of said reaction chamber and said shower plate, said evaporation plate having (i) a vaporization surface which is an external, convex surface facing the ceiling of the reaction chamber, having a center under the orifice, and extending outward toward an outer periphery of the shower plate, (ii) a bottom surface, which is an external surface facing the shower plate, and (iii) an interior defined between the vaporization surface and the bottom surface, said vaporization surface having inlet pores distributed exclusively at its outer periphery, said inlet pores being through-holes penetrating the vaporization surface and opening to the interior, wherein a fluid passage is formed from an exterior of the evaporation plate to the interior of the evaporation plate through the inlet pores, said bottom surface having outlet pores which are through-holes opening to the shower plate, wherein a fluid passage is formed from the interior of the evaporation plate to an exterior of the evaporation plate through the outlet pores; and

a temperature controller for controlling said shower plate and said evaporation plate at respective given temperatures.

2. The apparatus as claimed in claim 1, wherein a base area of said evaporation plate is within the range of 80% to 120% of a base area of said space.

3. The apparatus as claimed in claim 1, wherein the given temperature of said evaporation plate is within the range of 40°

C. to 300°

C.

4. The apparatus as claimed in claim 3, wherein the given temperature of said shower plate is in the range of 0-50°

C. higher than the temperature of said evaporation plate.

5. The apparatus as claimed in claim 1, wherein said temperature controller comprises at least one heater which is arranged adjacently to said evaporation plate and to said shower plate, temperature detectors which are respectively linked to said evaporation plate and to said shower plate, and a temperature regulator which is linked to said heater and said temperature detectors.

6. The apparatus as claimed in claim 1, wherein said liquid raw material is a solution wherein a metal complex raw material or a solid raw material used for deposition is dissolved in a solvent.

7. The apparatus as claimed in claim 1, wherein said carrier gas is an inert gas.

8. The apparatus as claimed in claim 1, which further comprises a pressure detector for detecting a pressure in a space between the ceiling of said reaction chamber and said evaporation plate, and a pressure detector for detecting a pressure in a space between said shower plate and said susceptor.

9. The apparatus as claimed in claim 1, wherein the evaporation plate is a hollow plate having an upper plate, a lower plate, and an interior therebetween, said upper plate constituting the upper surface, said lower plate having pores, wherein the liquid raw material flows through the pores of the upper plate, the interior, and the pores of the lower plate toward the shower plate.

10. The apparatus as claimed in claim 9, wherein the upper plate of the evaporation plate is a conical surface on which the liquid raw material flows from the center to the periphery of the upper plate.

11. The apparatus as claimed in claim 9, wherein the pores of the upper plate are arranged along the periphery of the upper plate at equal intervals.

12. The apparatus as claimed in claim 5, wherein the at least one heater is arranged exclusively downstream of the orifice.

13. The apparatus as claimed in claim 9, wherein the number of the pores of the lower plate is greater than that of the upper plate.

14. The apparatus as claimed in claim 9, wherein the pores of the upper and lower plates are arranged concentrically.