Method for manufacturing an electro-optical device

• US 7,462,501 B2
• Filed: 03/14/2005
• Issued: 12/09/2008
• Est. Priority Date: 06/04/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Konuma, Toshimitsu, Yamamoto, Kunitaka, Koyama, Jun, Yamazaki, Shunpei
• Primary Examiner(s): Sarkar; Asok K
• Application Number:
  US11/078,521
• Publication Number:
  US 20050197031A1
• Time in Patent Office: 1,366 Days
• Field of Search: 438/22, 257/E33.061
• US Class Current: 438/22
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/146 poly N-vinylcarbazol; Derivatives thereof
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/346 comprising platinum
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/649 Aromatic compounds comprising a hetero atom

Abstract

An object of the present invention is to provide an EL display device having high operation performance and reliability.

A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Claims

1. A method for manufacturing an electro-optical device comprising:

forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;

forming a passivation film over the first and second thin film transistors;

forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;

forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and

forming a second electrode over the EL layer,

wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor, and

wherein a gate of the first thin film transistor is electrically connected to a gate wiring.

2. The method according to claim 1, further comprising:

forming a bank comprising a resin over the pixel electrode.

3. The method according to claim 1, wherein the EL layer comprises an organic material.

4. The method according to claim 1, wherein the ink jet method uses a piezo element.

5. The method according to claim 1, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

6. The method according to claim 1, further comprising:

forming at least one insulating film over the passivation film; and

forming a contact hole in the passivation film and the at least one insulating film,

wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

20. The method according to claim 1, further comprising:

forming a bank comprising a resin over the pixel electrode.

7. A method for manufacturing an electro-optical device comprising:

forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;

forming a passivation film over the first and second thin film transistors;

forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;

forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed an ink jet method; and

forming a second electrode over the EL layer,

wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor,

wherein a gate of the first tin film transistor is electrically connected to a gate wiring, and

wherein the EL layer and the second electrode are formed without opening to an air.

8. The method according to claim 7, further comprising:

forming a bank comprising a resin over the pixel electrode.

9. The method according to claim 7, wherein the EL layer comprises an organic material.

10. The method according to claim 7, wherein the ink jet method uses a piezo element.

11. The method according to claim 7, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

12. The method according to claim 7, further comprising:

forming at least one insulating film over the passivation film; and

forming a contact hole in the passivation film and the at least one insulating film,

wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

13. A method for manufacturing an electro-optical device comprising:

forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;

forming a first passivation film over the first and second thin film transistors;

forming a pixel electrode over the first passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;

forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method;

forming a second electrode over the EL layer; and

forming a second passivation film over the second electrode,

wherein one of a source and a drain of the first thin film transistor is electrically connected to a sate of the second thin film transistor, and

wherein a pate of the first thin film transistor is electrically connected to a gate wiring.

14. The method according to claim 13, further comprising:

forming a bank comprising a resin over the pixel electrode.

15. The method according to claim 13, wherein the EL layer comprises an organic material.

16. The method according to claim 13, wherein the ink jet method uses a piezo element.

17. The method according to claim 13, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

18. The method according to claim 13, further comprising:

forming at least one insulating film over the first passivation film; and

forming a contact hole in the first passivation film and the at least one insulating film

wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

19. A method for manufacturing an electro-optical device comprising:

forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;

forming a first passivation film over the first and second thin film transistors;

forming a pixel electrode over the first passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;

forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method;

forming a second electrode over the EL layer; and

forming a second passivation film over the second electrode,

wherein one of a source and a drain of the first thin film transistor is electrically connected to a sate of the second thin film transistor,

wherein a gate of the first thin film transistor is electrically connected to a gate wiring, and

wherein the EL layer, the second electrode and the second passivation film are formed without opening to an air.

21. The method according to claim 19, wherein the EL layer comprises an organic material.

22. The method according to claim 19, wherein the ink jet method uses a piezo element.

23. The method according to claim 19, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

24. The method according to claim 19, further comprising:

forming at least one insulating film over the first passivation film; and

forming a contact hole in the first passivation film and the at least one insulating film,

wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

25. A method for manufacturing an electro-optical device comprising:

forming a first thin film transistor having multi-gate structure, a second thin film transistor having single-gate structure and a storage capacitor on an insulating surface;

forming a passivation film over the first and second thin film transistors and the storage capacitor;

forming a pixel electrode over the passivation film, the pixel electrode electrically connected to the second thin film transistor;

forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and

forming a second electrode over the EL layer,

wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor and an electrode of the storage capacitor, and

wherein a gate of the first thin film transistor is electrically connected to a gate wiring.

26. The method according to claim 25, further comprising:

forming a bank comprising a resin over the pixel electrode.

27. The method according to claim 25, wherein the EL layer comprises an organic material.

28. The method according to claim 25, wherein the ink jet method uses a piezo element.

29. The method according to claim 25, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

30. The method according to claim 25, further comprising:

forming at least one insulating film over the passivation film; and

fanning a contact hole in the passivation film and the at least one insulating film,

wherein the pixel electrode is electrically connected to the one of a source and a drain of the second thin film transistor through the contact hole, and

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.