Method for manufacturing an electro-optical device
First Claim
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1. A method for manufacturing an electro-optical device comprising:
- forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface;
forming a passivation film over the first and second thin film transistors;
forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor;
forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and
forming a second electrode over the EL layer,wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor, andwherein a gate of the first thin film transistor is electrically connected to a gate wiring.
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Abstract
An object of the present invention is to provide an EL display device having high operation performance and reliability.
A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
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Citations
30 Claims
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1. A method for manufacturing an electro-optical device comprising:
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forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface; forming a passivation film over the first and second thin film transistors; forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor; forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and forming a second electrode over the EL layer, wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor, and wherein a gate of the first thin film transistor is electrically connected to a gate wiring. - View Dependent Claims (2, 3, 4, 5, 6, 20)
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7. A method for manufacturing an electro-optical device comprising:
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forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface; forming a passivation film over the first and second thin film transistors; forming a pixel electrode over the passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor; forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed an ink jet method; and forming a second electrode over the EL layer, wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor, wherein a gate of the first tin film transistor is electrically connected to a gate wiring, and wherein the EL layer and the second electrode are formed without opening to an air. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing an electro-optical device comprising:
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forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface; forming a first passivation film over the first and second thin film transistors; forming a pixel electrode over the first passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor; forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; forming a second electrode over the EL layer; and forming a second passivation film over the second electrode, wherein one of a source and a drain of the first thin film transistor is electrically connected to a sate of the second thin film transistor, and wherein a pate of the first thin film transistor is electrically connected to a gate wiring. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for manufacturing an electro-optical device comprising:
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forming a first thin film transistor having multi-gate structure and a second thin film transistor having single-gate structure on an insulating surface; forming a first passivation film over the first and second thin film transistors; forming a pixel electrode over the first passivation film, the pixel electrode electrically connected to one of a source and a drain of the second thin film transistor; forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; forming a second electrode over the EL layer; and forming a second passivation film over the second electrode, wherein one of a source and a drain of the first thin film transistor is electrically connected to a sate of the second thin film transistor, wherein a gate of the first thin film transistor is electrically connected to a gate wiring, and wherein the EL layer, the second electrode and the second passivation film are formed without opening to an air. - View Dependent Claims (21, 22, 23, 24)
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25. A method for manufacturing an electro-optical device comprising:
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forming a first thin film transistor having multi-gate structure, a second thin film transistor having single-gate structure and a storage capacitor on an insulating surface; forming a passivation film over the first and second thin film transistors and the storage capacitor; forming a pixel electrode over the passivation film, the pixel electrode electrically connected to the second thin film transistor; forming an EL layer including at least one organic layer over the pixel electrode, wherein the organic layer is formed by an ink jet method; and forming a second electrode over the EL layer, wherein one of a source and a drain of the first thin film transistor is electrically connected to a gate of the second thin film transistor and an electrode of the storage capacitor, and wherein a gate of the first thin film transistor is electrically connected to a gate wiring. - View Dependent Claims (26, 27, 28, 29, 30)
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Specification