Memory device including resistance-changing function body
First Claim
1. A memory in which:
- at least two memory cells including a resistance-changing function body are arranged in a common plane parallel to a substrate;
the resistance-changing function body of each of the memory cells comprises;
an object made of a first substance and interposed between a first electrode and a second electrode; and
a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage between the first electrode and the second electrode, whereinthe first substance makes an electrical barrier against the second substance, andthe objects made of the first substance of respective memory cells mutually adjacent in the direction parallel to the substrate are integral and continuous between the adjacent memory cells.
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Accused Products
Abstract
A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
48 Citations
10 Claims
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1. A memory in which:
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at least two memory cells including a resistance-changing function body are arranged in a common plane parallel to a substrate; the resistance-changing function body of each of the memory cells comprises; an object made of a first substance and interposed between a first electrode and a second electrode; and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage between the first electrode and the second electrode, wherein the first substance makes an electrical barrier against the second substance, and the objects made of the first substance of respective memory cells mutually adjacent in the direction parallel to the substrate are integral and continuous between the adjacent memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification