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Memory device including resistance-changing function body

  • US 7,462,857 B2
  • Filed: 09/18/2003
  • Issued: 12/09/2008
  • Est. Priority Date: 09/19/2002
  • Status: Expired due to Fees
First Claim
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1. A memory in which:

  • at least two memory cells including a resistance-changing function body are arranged in a common plane parallel to a substrate;

    the resistance-changing function body of each of the memory cells comprises;

    an object made of a first substance and interposed between a first electrode and a second electrode; and

    a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage between the first electrode and the second electrode, whereinthe first substance makes an electrical barrier against the second substance, andthe objects made of the first substance of respective memory cells mutually adjacent in the direction parallel to the substrate are integral and continuous between the adjacent memory cells.

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