LED bonding structures and methods of fabricating LED bonding structures
First Claim
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1. An LED chip comprising:
- a conductive submount (24);
a bond pad (31) having a total volume less than 3×
10−
5 mm3 conductively joined to said submount;
a first ohmic contact (18) on said bond pad opposite from said submount;
an epitaxial region (12) comprising at least a p-type layer (16) and an n-type layer (14);
a conductive substrate (10) on said epitaxial region opposite said first ohmic contact; and
an electrode 22 to said conductive substrate opposite from said epitaxial region.
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Abstract
An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pad is designed to accept 30 g to 70 g of force or more without squeeze-out.
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Citations
14 Claims
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1. An LED chip comprising:
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a conductive submount (24); a bond pad (31) having a total volume less than 3×
10−
5 mm3 conductively joined to said submount;a first ohmic contact (18) on said bond pad opposite from said submount; an epitaxial region (12) comprising at least a p-type layer (16) and an n-type layer (14); a conductive substrate (10) on said epitaxial region opposite said first ohmic contact; and an electrode 22 to said conductive substrate opposite from said epitaxial region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification