Nitride-based light emitting device, and method of manufacturing the same
First Claim
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1. A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer, the light emitting device comprising:
- a reflective layer formed of rhodium which reflects light emitting from the light emitting layer;
at least one metal layer which is formed between the reflective layer and the P-type clad layer, wherein the at least one metal layer comprises any one of selected from a first metal group consisting of zinc, indium and tin; and
a P-type electrode pad formed on a portion of the reflective layer,wherein the P-type electrode pad covers a portion, less than a whole, of an upper surface of the reflective layer.
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Abstract
A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.
17 Citations
12 Claims
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1. A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer, the light emitting device comprising:
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a reflective layer formed of rhodium which reflects light emitting from the light emitting layer; at least one metal layer which is formed between the reflective layer and the P-type clad layer, wherein the at least one metal layer comprises any one of selected from a first metal group consisting of zinc, indium and tin; and a P-type electrode pad formed on a portion of the reflective layer, wherein the P-type electrode pad covers a portion, less than a whole, of an upper surface of the reflective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer, the light emitting device comprising:
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a metal layer formed directly on the P-type clad layer; a reflective layer formed directly on the metal layer which reflects light emitting from the light emitting layer, wherein the metal layer reacts with a component of the P-type clad layer other than nitride to increase an effective carrier concentration of the P-type clad layer; and a P-type electrode pad formed on a portion of the reflective layer, wherein the P-type electrode pad covers a portion, less than a whole, of an upper surface of the reflective layer. - View Dependent Claims (10, 11, 12)
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Specification