Semiconductor component comprising flip chip contacts with polymer cores and method of producing the same
First Claim
Patent Images
1. A semiconductor component, comprising:
- a semiconductor chip comprising a wiring structure including at least one metallization layer with contact areas and at least one dielectric insulation layer comprising a low-k material having a relative permittivity ε
r that is lower than the relative permittivity of a silicon oxide; and
flip-chip contacts arranged on the contact areas of the metallization layer, the flip-chip contacts comprising a polymer core surrounded by a lead-free solder material.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor component includes flip-chip contacts arranged on a wiring structure of a semiconductor chip. The wiring structure includes at least one metallization layer and at least one dielectric insulation layer made of a low-k material with a relative permittivity εr lower than the relative permittivity of a silicon dioxide. The flip-chip contacts are arranged on contact areas of an upper metallization layer and have a polymer core surrounded by a lead-free solder sheath.
-
Citations
15 Claims
-
1. A semiconductor component, comprising:
-
a semiconductor chip comprising a wiring structure including at least one metallization layer with contact areas and at least one dielectric insulation layer comprising a low-k material having a relative permittivity ε
r that is lower than the relative permittivity of a silicon oxide; andflip-chip contacts arranged on the contact areas of the metallization layer, the flip-chip contacts comprising a polymer core surrounded by a lead-free solder material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method for producing a semiconductor component comprising flip-chip contacts, comprising:
-
producing a semiconductor chip including a wiring structure including at least one metallization layer with contact areas for the flip-chip contacts and at least one dielectric insulation layer comprising a low-k material having a relative permittivity ε
r lower than the relative permittivity of a silicon oxide; andapplying the flip-chip contacts to the contact areas, the flip-chip contacts comprising a polymer core surrounded by a lead-free solder material. - View Dependent Claims (13, 14)
-
-
15. A semiconductor component, comprising:
-
a semiconductor chip comprising a wiring structure including at least one metallization layer with contact areas and at least one dielectric insulation layer comprising a low-k material having a relative permittivity ε
r that is lower than the relative permittivity of a silicon oxide; andflip-chip contacts arranged on the contact areas of the metallization layer, the flip-chip contacts comprising a polymer core entirely covered by a layer of a lead-free solder material.
-
Specification