Plasma immersion ion implantation process
First Claim
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1. A method of processing a workpiece, comprising:
- providing a main reactor chamber having a ceiling gas distribution plate facing a wafer support and side gas injectors below said gas distribution plate, and providing a remote source chamber enclosed separately from the main reactor chamber;
evacuating said main reactor chamber and evacuating said remote source chamber;
placing a wafer on said wafer support in said main chamber and, while said wafer is on said wafer support, providing a plasma in said main chamber having ions that impinge on said wafer by introducing a process gas through said side gas injectors in said main reactor chamber and applying RF power to external transverse reentrant conduits having chamber entry ports on opposite sides of said main reactor chamber, so as to produce an oscillating plasma current in a closed reentrant path that encircles said gas distribution plate;
increasing dissociation of species in said main reactor chamber independently of said RF power, by generating a remote plasma in said remote source chamber and introducing through said ceiling gas distribution plate excited radicals from said remote plasma into said main reactor chamber.
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Abstract
A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.
218 Citations
18 Claims
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1. A method of processing a workpiece, comprising:
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providing a main reactor chamber having a ceiling gas distribution plate facing a wafer support and side gas injectors below said gas distribution plate, and providing a remote source chamber enclosed separately from the main reactor chamber; evacuating said main reactor chamber and evacuating said remote source chamber; placing a wafer on said wafer support in said main chamber and, while said wafer is on said wafer support, providing a plasma in said main chamber having ions that impinge on said wafer by introducing a process gas through said side gas injectors in said main reactor chamber and applying RF power to external transverse reentrant conduits having chamber entry ports on opposite sides of said main reactor chamber, so as to produce an oscillating plasma current in a closed reentrant path that encircles said gas distribution plate; increasing dissociation of species in said main reactor chamber independently of said RF power, by generating a remote plasma in said remote source chamber and introducing through said ceiling gas distribution plate excited radicals from said remote plasma into said main reactor chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of processing a workpiece, comprising:
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providing a main reactor chamber having a ceiling gas distribution plate facing a wafer support and side gas injectors below said gas distribution plate, and providing a remote source chamber enclosed separately from the main reactor chamber; evacuating said main reactor chamber and evacuating said remote source chamber; placing a wafer on said wafer support in said main chamber and, while said wafer is on said wafer support, generating a plasma in said main chamber having ions that impinge on said wafer by introducing a process gas through said side gas injectors in said main reactor chamber and applying RF power to external transverse reentrant conduits having chamber entry ports on opposite sides of said main reactor chamber, so as to produce an oscillating plasma current in a closed reentrant path that encircles said gas distribution plate; regulating the proportion of reactive ions to reactive radicals independently of said RE power, by generating a remote plasma in said remote source chamber and introducing through said ceiling gas distribution plate reactive radicals from said remote plasma into said main reactor chamber. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification