×

Method of making vertical structure semiconductor devices including forming hard and soft copper layers

  • US 7,465,592 B2
  • Filed: 04/27/2005
  • Issued: 12/16/2008
  • Est. Priority Date: 04/28/2004
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating semiconductor devices, comprising the steps of:

  • forming a plurality of semiconductor layers over an insulated substrate, at least one of said plurality of semiconductor layers comprises GaN;

    forming a plurality of metal support layers deposited using electroplating including a copper layer plated using cyanide or acid-base bath and a sulfate-base copper alloy layer over a first side of said plurality of semiconductor layers;

    removing said insulated substrate from said plurality of semiconductor layers;

    forming one or more electrical contacts, after said insulated substrate was removed, over a second side of said plurality of semiconductor layers wherein said second side is opposite said first side; and

    separating said plurality of semiconductor layers into a plurality of individual semiconductor devices.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×