Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
First Claim
1. A method of manufacturing a thin film integrated circuit device comprising:
- forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;
forming a groove in a boundary region between the plurality of thin film integrated circuit devices; and
separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices.
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Accused Products
Abstract
With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip.
A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
85 Citations
28 Claims
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1. A method of manufacturing a thin film integrated circuit device comprising:
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forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer; forming a groove in a boundary region between the plurality of thin film integrated circuit devices; and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a thin film integrated circuit device comprising:
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forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer; forming a groove in a boundary between the plurality of thin film integrated circuit devices; temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices; separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices; and removing the jig bonded to the plurality of thin film integrated circuit devices. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method of manufacturing a thin film integrated circuit device comprising:
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forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer; forming a groove in a boundary region between the plurality of thin film integrated circuit devices; thinning the lower single-crystal silicon layer by polishing; separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices. - View Dependent Claims (13, 14, 15, 16)
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17. A method of manufacturing a thin film integrated circuit device comprising:
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forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer; forming a groove in a boundary between the plurality of thin film integrated circuit devices; temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices; thinning the lower single-crystal silicon layer by polishing; separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices; and removing the jig bonded to the plurality of thin film integrated circuit devices. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of manufacturing a non-contact type thin film integrated circuit device comprising:
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forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer; forming a groove between the plurality of thin film integrated circuit devices; separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices; and forming an antenna around the separated thin film integrated circuit device. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification