Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)

• US 7,465,659 B2
• Filed: 06/23/2006
• Issued: 12/16/2008
• Est. Priority Date: 12/14/2001
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Lang, Chi-I, Yim, Kang Sub, Lee, Peter Wai-Man, Tam, Melissa M., Sugiarto, Dian
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US11/426,141
• Publication Number:
  US 20060246737A1
• Time in Patent Office: 907 Days
• Field of Search: 438/631, 438/634, 438/638, 438/789, 438/627, 438/643, 438/653, 257/E31.023, 257/E21.277, 257/E21.021
• US Class Current: 438/627
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/7681 : involving one or more buried masks
• CPC Class Codes: H01L 21/76825 : by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76826 : by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76828 : thermal treatment
• CPC Class Codes: H01L 21/76829 : characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 : Multiple layers
• CPC Class Codes: H01L 21/76834 : formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence

Abstract

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Claims

1. A method for processing a substrate, comprising:

depositing a phenyl containing silicon carbide layer on the substrate by reacting a first gas mixture comprising hydrogen, an inert gas, and dimethylphenylsilane in a plasma; and

depositing an oxygen-doped silicon carbide layer on the phenyl containing silicon carbide layer by reacting a second gas mixture comprising trimethylsilane and carbon dioxide.

2. The method of claim 1, wherein the inert gas comprises helium, argon, or combinations thereof.

3. The method of claim 1, further comprising depositing a low dielectric constant material on the oxygen-doped silicon carbide layer.

4. The method of claim 1, wherein the second gas mixture further comprises an inert gas selected from the group consisting of helium, argon, and combinations thereof.

5. The method of claim 1, wherein the depositing an oxygen-doped silicon carbide layer comprises supplying trimethylsilane to a processing chamber at a flow rate between about 50 sccm and about 300 sccm, supplying carbon dioxide at a flow rate between about 100 sccm and about 800 sccm, supplying helium at a flow rate between about 200 sccm and about 800 sccm, maintaining a substrate temperature between about 300°

C. and about 400°

C., maintaining a chamber pressure between about 2 Torr and about 5 Torr, and applying a RF power of between about 200 watts and about 500 watts.

6. The method of claim 1, wherein the depositing a phenyl containing silicon carbide layer comprises supplying dimethylphenylsilane to a processing chamber, supplying hydrogen at a flow rate between about 100 sccm and about 500 sccm to the processing chamber, supplying helium to a processing chamber, maintaining a substrate temperature between about 200°

C. and about 400°

C., maintaining a chamber pressure between about 3 Torr and about 12 Torr, and applying a RF power of between about 200 watts and about 700 watts.

7. The method of claim 1, further comprising pre-treating a substrate with a hydrogen plasma.

8. A method for processing a substrate, comprising:

pre-treating the substrate with a hydrogen plasma;

depositing a phenyl containing silicon carbide layer on the substrate by reacting a first gas mixture comprising dimethylphenylsilane while applying RF power; and

depositing an oxygen-doped silicon carbide layer on the phenyl containing silicon carbide layer by reacting a second gas mixture comprising trimethylsilane and carbon dioxide.

9. The method of claim 8, further comprising depositing a low dielectric constant material on the oxygen-doped silicon carbide layer.

10. The method of claim 8, wherein the second gas mixture further comprises an inert gas selected from the group consisting of helium, argon, and combinations thereof.

11. The method of claim 8, wherein the depositing an oxygen-doped silicon carbide layer comprises supplying trimethylsilane to a processing chamber at a flow rate between about 50 sccm and about 300 sccm, supplying carbon dioxide at a flow rate between about 100 sccm and about 800 sccm, supplying helium at a flow rate between about 200 sccm and about 800 sccm, maintaining a substrate temperature between about 300°

C. and about 400°

C., maintaining a chamber pressure between about 2 Torr and about 5 Torr, and applying the RF power at about 200 watts to about 500 watts.

12. The method of claim 8, wherein the depositing an phenyl containing silicon carbide layer comprises supplying dimethylphenylsilane to a processing chamber, supplying hydrogen at a flow rate between about 100 sccm and about 500 sccm to the processing chamber, supplying helium to a processing chamber, maintaining a substrate temperature between about 200°

C. and about 400°

C., maintaining a chamber pressure between about 3 Torr and about 12 Torr, and applying the RF power at about 200 watts to about 700 watts.