Deformable organic devices
First Claim
1. A device fabricated by the process of:
- depositing an inorganic conductive or semiconductive layer disposed over a substrate, the substrate having an original configuration;
depositing a non-substrate organic layer on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer;
deforming the substrate such that there is an average radial or biaxial strain of at least 0.05% relative to the original configuration.
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Accused Products
Abstract
A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.
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Citations
19 Claims
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1. A device fabricated by the process of:
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depositing an inorganic conductive or semiconductive layer disposed over a substrate, the substrate having an original configuration; depositing a non-substrate organic layer on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer; deforming the substrate such that there is an average radial or biaxial strain of at least 0.05% relative to the original configuration.
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2. A method of fabricating a device, comprising:
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depositing an inorganic conductive or semiconductive layer disposed over a substrate, the substrate having an original configuration; depositing a non-substrate organic layer on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer; deforming the substrate such that there is an average radial or biaxial strain of at least 0.05% relative to the original configuration. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A device, comprising:
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a substrate; an inorganic layer disposed over the substrate; a non-substrate organic layer disposed on the inorganic layer, such that the organic layer is in direct physical contact with the inorganic layer; wherein the substrate is deformed such that there is a nominal axial strain of at least 5% relative to a flat substrate at an interface between the inorganic layer and the organic layer.
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9. A device, comprising:
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a substrate; an inorganic conductive or semiconductive layer disposed over the substrate; a non-substrate organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer; wherein the substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification