Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a plate of semiconductor layer;
an insulator layer containing a metal element on the plate of semiconductor layer and in contact with at least two adjoining faces of the plate of semiconductor layer, a thickness of the insulator layer being larger in the vicinity of a boundary line at a corner between the two adjoining faces of the plate of semiconductor layer than in a region other than the vicinity of the boundary line; and
a band of conductor layer facing a middle portion of the plate of semiconductor layer via the insulator layer.
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Abstract
A semiconductor device includes a plate of semiconductor layer, an insulator layer formed on the plate of semiconductor layer and brought into contact with the plate of semiconductor layer by at least two adjacent faces, a thickness of the insulator layer in the vicinity of a boundary line between the two adjacent faces being larger than that of the insulator layer in a region other than the vicinity of the boundary line, and a band of conductor layer formed facing a middle portion of the plate-like semiconductor layer via the insulator layer.
3 Citations
9 Claims
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1. A semiconductor device comprising:
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a plate of semiconductor layer; an insulator layer containing a metal element on the plate of semiconductor layer and in contact with at least two adjoining faces of the plate of semiconductor layer, a thickness of the insulator layer being larger in the vicinity of a boundary line at a corner between the two adjoining faces of the plate of semiconductor layer than in a region other than the vicinity of the boundary line; and a band of conductor layer facing a middle portion of the plate of semiconductor layer via the insulator layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification