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Semiconductor device

  • US 7,465,998 B2
  • Filed: 06/06/2005
  • Issued: 12/16/2008
  • Est. Priority Date: 09/21/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a plate of semiconductor layer;

    an insulator layer containing a metal element on the plate of semiconductor layer and in contact with at least two adjoining faces of the plate of semiconductor layer, a thickness of the insulator layer being larger in the vicinity of a boundary line at a corner between the two adjoining faces of the plate of semiconductor layer than in a region other than the vicinity of the boundary line; and

    a band of conductor layer facing a middle portion of the plate of semiconductor layer via the insulator layer.

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