Rectangular semi-conducting support for microelectronics and method for making same
First Claim
1. A semi-conducting support for microelectronics, comprising:
- a rectangular graphite substrate having a front surface and a rear surface;
at least one semi-conducting layer arranged on the front surface of the substrate;
at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; and
a second stack arranged on the rear surface of the substrate, the second stack successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and a semi-conducting layer.
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Abstract
The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack successively comprises a single-crystal diamond layer, an electrically insulating oxide layer and a semi-conducting layer. The support can comprise a second stack arranged on the rear surface of the substrate and comprising the same succession of layers as the first stack or comprising a polymer material layer. A thermal connection passing through the first and/or second stacks and connecting the graphite substrate to an external surface of the support enables heat to be removed. The method can comprise production of the semi-conducting layer by molecular bonding of rectangular silicon strips onto the oxide layer.
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Citations
30 Claims
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1. A semi-conducting support for microelectronics, comprising:
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a rectangular graphite substrate having a front surface and a rear surface; at least one semi-conducting layer arranged on the front surface of the substrate; at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; and a second stack arranged on the rear surface of the substrate, the second stack successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and a semi-conducting layer. - View Dependent Claims (6, 7, 10, 11)
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2. A semi-conducting support for microelectronics, comprising:
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a rectangular graphite substrate having a front surface and a rear surface; at least one semi-conducting layer arranged on the front surface of the substrate; at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; and a second stack arranged on the rear surface of the substrate, the second stack comprising at least one polymer material layer. - View Dependent Claims (12, 13, 14, 15, 16)
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3. A semi-conducting support for microelectronics, comprising:
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a rectangular graphite substrate having a front surface and a rear surface; at least one semi-conducting layer arranged on the front surface of the substrate; at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; a second stack arranged on the rear surface of the substrate, the second stack successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and a semi-conducting layer; and at least one electrical connection passing through the substrate and connecting the semi-conducting layer of the first stack to the second stack. - View Dependent Claims (17, 18, 19, 20)
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4. A semi-conducting support for microelectronics, comprising:
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a rectangular graphite substrate having a front surface and a rear surface; at least one semi-conducting layer arranged on the front surface of the substrate; at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; a second stack arranged on the rear surface of the substrate, the second stack successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and a semi-conducting layer; and an additional insulating layer disposed between the substrate and at least one of the first and second stacks. - View Dependent Claims (21, 22, 23, 24)
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5. A semi-conducting support for microelectronics, comprising:
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a rectangular graphite substrate having a front surface and a rear surface; at least one semi-conducting layer arranged on the front surface of the substrate; at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; a second stack arranged on the rear surface of the substrate, the second stack successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and a semi-conducting layer; and an additional metallic layer disposed between the substrate and at least one of the first and second stacks. - View Dependent Claims (25, 26, 27, 28)
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8. A semi-conducting support for microelectronics, comprising:
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a rectangular graphite substrate having a front surface and a rear surface; at least one semi-conducting layer arranged on the front surface of the substrate; at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer; a second stack arranged on the rear surface of the substrate, the second stack successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and a semi-conducting layer; and at least one thermal connection passing through at least one of the first and second stacks and connecting the graphite substrate to an external surface of the support. - View Dependent Claims (9, 29, 30)
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Specification