Transforming metrology data from a semiconductor treatment system using multivariate analysis

• US 7,467,064 B2
• Filed: 02/07/2006
• Issued: 12/16/2008
• Est. Priority Date: 02/07/2006
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Timbre Technologies Incorporated (Tokyo Electron Limited)
• Inventors: Chen, Yan, Vuong, Vi, Bao, Junwei, Egret, Sebastien, Heiko, Weichert
• Primary Examiner(s): Barlow, Jr.; John E.
• Assistant Examiner(s): Bhat; Aditya S
• Application Number:
  US11/349,773
• Publication Number:
  US 20070185684A1
• Time in Patent Office: 1,043 Days
• Field of Search: 702/181
• US Class Current: 702/181
• CPC Class Codes: G01N 2021/215 Brewster incidence arrangement
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/4788 Diffraction for sizing particles G01N15/0205

Abstract

Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.

Claims

1. A method of transforming metrology data from a semiconductor treatment system using multivariate analysis, the method comprising:

a) obtaining a set of metrology data measured or simulated for one or more substrates treated using the treatment system wherein the set of metrology data includes a set of diffraction signals measured from illuminating a structure on a substrate;

b) determining one or more essential variables for the obtained set of metrology data using multivariate analysis;

c) obtaining a first metrology data measured or simulated for one or more substrates treated using the treatment system, wherein the first metrology data is not one of the metrology data in the set of metrology data obtained in a) wherein the first metrology data is a diffraction signal measured from illuminating a structure on a substrate; and

d) transforming the first metrology data obtained in c) into a second metrology data using the one or more essential variables determined in b).

2. The method of claim 1, wherein using multivariate analysis comprises using a linear or nonlinear analysis.

3. The method of claim 1, wherein b) comprises:

calculating one or more principal components from the obtained set of metrology data using principal components analysis.

4. The method of claim 1, further comprising:

performing statistical data calculations on the obtained set of metrology data before b).

5. The method of claim 4, wherein b) comprises:

calculating a covariance matrix from the obtained set of metrology data; and

calculating eigenvalues and corresponding eigenvectors for the covariance matrix, wherein one or more of the eigenvalues and eigenvectors are used as the one or more essential variables.

6. The method of claim 5, wherein performing statistical data calculations comprises:

centering or normalizing the obtained set of metrology data.

7. The method of claim 1, further comprising:

verifying a percentage of variability in the obtained set of metrology data indicated by the one or more determined essential variables.

8. The method of claim 1, further comprising:

when two or more essential variables have been determined, selecting at least one essential variable based on a percentage of variability indicated by the essential variables.

9. The method of claim 1, wherein d) comprises:

selecting one or more of the essential variables determined in b); and

projecting the one or more selected essential variables onto the first metrology data to produce the second metrology data.

10. The method of claim 1, further comprising:

characterizing a treatment process performed in the treatment system using the second metrology data.

11. The method of claim 10, wherein characterizing a treatment process comprises:

defining a process window for the treatment process.

12. The method of claim 10, further comprising:

monitoring or controlling the treatment process using the second metrology data.

13. The method of claim 1, further comprising:

before a), collecting the set of metrology data for a treatment process performed in the treatment system;

before b), selecting objectives for an analysis of the treatment process;

before b), selecting one or more termination criteria for performing the analysis;

after b), validating the one or more essential variables determined in b) by computing one or more statistics associated with explaining the set of metrology data by the one or more essential variables;

after b), determining if the one or more termination criteria are met;

if the one or more termination criteria are not met, adjusting one or more of the following;

the one or more termination criteria, the objectives for the analysis, or the multivariate analysis;

after b), identifying at least one of the one or more essential variables determined in b) using one or more pattern recognition techniques; and

utilizing the identified essential variables to characterize, adjust, monitor, or control the treatment process.

14. The method of claim 13, wherein utilizing the identified essential variables comprises:

determining a relationship between the second metrology data and process performance data related to the profile of one or more structure on one or more substrates.

15. A computer-readable medium containing computer executable instructions for causing a computer to transform metrology data from a semiconductor treatment system using multivariate analysis, comprising instructions for:

a) obtaining a set of metrology data measured or simulated for one or more substrates treated using the treatment system wherein the set of metrology data includes a set of diffraction signals measured from illuminating a structure on a substrate;

b) determining one or more essential variables for the obtained set of metrology data using multivariate analysis;

c) obtaining a first metrology data measured or simulated for one or more substrates treated using the treatment system, wherein the first metrology data is not one of the metrology data in the set of metrology data obtained in a) wherein the first metrology data is a diffraction signal measured from illuminating a structure on a substrate; and

d) transforming the first metrology data obtained in c) into a second metrology data using the one or more essential variables determined in b).

16. The computer-readable medium of claim 15, further comprising instructions for:

performing statistical data calculations on the obtained set of metrology data before b).

17. The computer-readable medium of claim 16, wherein b) comprises instructions for:

calculating a covariance matrix from the obtained set of metrology data; and

calculating eigenvalues and corresponding eigenvectors for the covariance matrix, wherein one or more of the eigenvalues and eigenvectors are used as the one or more essential variables.

18. The computer-readable medium of claim 15, further comprising instructions for:

when two or more essential variables have been determined, selecting at least one essential variable based on a percentage of variability indicated by the essential variables.

19. The computer-readable medium of claim 15, wherein d) comprises instructions for:

selecting one or more of the essential variables determined in b); and

projecting the one or more selected essential variables onto the first metrology data to produce the second metrology data.

20. The computer-readable medium of claim 15, further comprising instructions for:

before a), collecting the set of metrology data for a treatment process performed in the treatment system;

before b), selecting objectives for an analysis of the treatment process;

before b), selecting one or more termination criteria for performing the analysis;

after b), validating the one or more essential variables determined in b) by computing one or more statistics associated with explaining the set of metrology data by the one or more essential variables;

after b), determining if the one or more termination criteria are met;

if the one or more termination criteria are not met, adjusting one or more of the following;

the one or more termination criteria, the objectives for the analysis, or the multivariate analysis;

after b), identifying at least one of the one or more essential variables determined in b) using one or more pattern recognition techniques; and

utilizing the identified essential variables to characterize, adjust, monitor, or control the treatment process.

21. The computer-readable medium of claim 20, wherein utilizing the identified essential variables comprises:

determining a relationship between the second metrology data and process performance data related to the profile of one or more structure on one or more substrates.

22. A system to transform metrology data from a semiconductor treatment system using multivariate analysis, the system comprising:

a metrology system to measure a set of metrology data for one or more substrates treated using the treatment system wherein the metrology system includes an ellipsometer or reflectometer, wherein the set of metrology data includes a set of diffraction signals measured from illuminating a structure on a substrate using the ellipsometer or reflectometer; and

a data processing system configured to;

a) obtain the set of metrology data;

b) determine one or more essential variables for the obtained set of metrology data using multivariate analysis;

c) obtain a first metrology data measured using the metrology system for one or more substrates treated using the treatment system, wherein the first metrology data is not one of the metrology data in the set of metrology data obtained in a) wherein the first metrology data is a diffraction signal measured from illuminating a structure on a substrate using the ellipsometer or reflectometer; and

d) transform the first metrology data obtained in c) into a second metrology data using the one or more essential variables determined in b).