Method for forming a photoresist pattern

• US 7,467,632 B2
• Filed: 01/04/2007
• Issued: 12/23/2008
• Est. Priority Date: 01/05/2004
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Bok, Cheol Kyu, Lee, Geun Su
• Primary Examiner(s): DELCOTTO, GREGORY R
• Application Number:
  US11/650,141
• Publication Number:
  US 20070163625A1
• Time in Patent Office: 719 Days
• Field of Search: None
• US Class Current: 134/1.3
• CPC Class Codes: C11D 1/58 Heterocyclic compounds
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors

Abstract

A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H₂O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.

Claims

1. A method for forming a photoresist pattern comprising:

(a) coating a photoresist composition on top of an underlying layer formed on a semiconductor substrate to form a photoresist film;

(b) exposing the photoresist film with an exposure light;

(c) developing the exposed photoresist film with a developing solution, and,

(d) spraying a cleaning solution over the photoresist film before or after the exposing step (b),

said cleaning solution comprising H₂O and an ionic surfactant represented by Formula 1;

2. The method of claim 1, further comprising a soft-baking step and/or a post-baking step before and/or after the exposing step (b), respectively.

3. The method of claim 1, wherein the exposure light is selected from the group consisting of VUV (157 nm), ArF (193 nm), KrF (248 nm), EUV (13 nm), E-beam, X-ray and ion beam.

4. The method of claim 1, comprising performing the exposing step (b) with exposure energy ranging from 0.1 mJ/cm² to 50 mJ/cm².