Method of fabricating oxide semiconductor device
First Claim
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1. A method for fabricating a device using an oxide semiconductor, the method comprising the steps of:
- forming the oxide semiconductor on a substrate; and
changing the conductivity of the oxide semiconductor by irradiating a predetermined region of the oxide semiconductor with an energy ray;
wherein the process of changing the conductivity of the oxide semiconductor comprises the steps of;
bringing a photocatalyst into contact with the predetermined region of the oxide semiconductor; and
decreasing the conductivity of the oxide semiconductor by irradiating the photocatalyst with light having an energy equal to or greater than the optical band-gap of the photocatalyst.
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Abstract
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
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6 Claims
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1. A method for fabricating a device using an oxide semiconductor, the method comprising the steps of:
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forming the oxide semiconductor on a substrate; and changing the conductivity of the oxide semiconductor by irradiating a predetermined region of the oxide semiconductor with an energy ray; wherein the process of changing the conductivity of the oxide semiconductor comprises the steps of; bringing a photocatalyst into contact with the predetermined region of the oxide semiconductor; and decreasing the conductivity of the oxide semiconductor by irradiating the photocatalyst with light having an energy equal to or greater than the optical band-gap of the photocatalyst. - View Dependent Claims (2, 3, 4, 5, 6)
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