Liquid crystal display device and fabricating method thereof
First Claim
Patent Images
1. A liquid crystal display device, comprising:
- a double-layer structure of a gate line, the double layer having a first transparent conductive layer and a second opaque conductive layer and having a step coverage;
a data line crossing to the gate line to define a pixel region;
a gate insulating film between the gate line and the data line;
a thin film transistor connected to the gate line and the data line;
a semiconductor layer defining a channel of the thin film transistor and overlapping with the data line;
a passivation film covering the data line and the thin film transistor;
a pixel electrode directly formed on the gate insulating film which is exposed by a pixel hole in the pixel region; and
a storage capacitor overlapping with the pixel electrode having the gate insulating film therebetween and having a lower storage electrode extended from the first transparent conductive layer.
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Abstract
A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer.
41 Citations
6 Claims
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1. A liquid crystal display device, comprising:
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a double-layer structure of a gate line, the double layer having a first transparent conductive layer and a second opaque conductive layer and having a step coverage; a data line crossing to the gate line to define a pixel region; a gate insulating film between the gate line and the data line; a thin film transistor connected to the gate line and the data line; a semiconductor layer defining a channel of the thin film transistor and overlapping with the data line; a passivation film covering the data line and the thin film transistor; a pixel electrode directly formed on the gate insulating film which is exposed by a pixel hole in the pixel region; and a storage capacitor overlapping with the pixel electrode having the gate insulating film therebetween and having a lower storage electrode extended from the first transparent conductive layer. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification